Thin-film transistors based on well-ordered thermally evaporated naphthacene films

D. J. Gundlach, J. A. Nichols, L. Zhou, T. N. Jackson

Research output: Contribution to journalArticlepeer-review

227 Scopus citations


We report on organic thin-film transistors fabricated using the small-molecule organic semiconductor naphthacene as the active layer material with device performance suitable for several large-area or low-cost electronics applications. We investigated naphthacene thin films deposited by thermal evaporation onto amorphous substrates held near room temperature. Using atomic-force microscopy and x-ray diffraction we find naphthacene films consist of a high density of submicron-sized grains with a surprisingly high degree of molecular order. Thin-film transistors fabricated using evaporated naphthacene films on thermally oxidized silicon substrates have field-effect mobility larger than 0.1 cm2/Vs, current on/off ratio greater than 106, negative threshold voltage, and subthreshold slope of 1 V/decade.

Original languageEnglish (US)
Pages (from-to)2925-2927
Number of pages3
JournalApplied Physics Letters
Issue number16
StatePublished - Apr 22 2002

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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