Abstract
We report on organic thin-film transistors fabricated using the small-molecule organic semiconductor naphthacene as the active layer material with device performance suitable for several large-area or low-cost electronics applications. We investigated naphthacene thin films deposited by thermal evaporation onto amorphous substrates held near room temperature. Using atomic-force microscopy and x-ray diffraction we find naphthacene films consist of a high density of submicron-sized grains with a surprisingly high degree of molecular order. Thin-film transistors fabricated using evaporated naphthacene films on thermally oxidized silicon substrates have field-effect mobility larger than 0.1 cm2/Vs, current on/off ratio greater than 106, negative threshold voltage, and subthreshold slope of 1 V/decade.
Original language | English (US) |
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Pages (from-to) | 2925-2927 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 80 |
Issue number | 16 |
DOIs | |
State | Published - Apr 22 2002 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)