Abstract
We report on organic thin-film transistors fabricated using the small-molecule organic semiconductor naphthacene as the active layer material with device performance suitable for several large-area or low-cost electronics applications. We investigated naphthacene thin films deposited by thermal evaporation onto amorphous substrates held near room temperature. Using atomic-force microscopy and x-ray diffraction we find naphthacene films consist of a high density of submicron-sized grains with a surprisingly high degree of molecular order. Thin-film transistors fabricated using evaporated naphthacene films on thermally oxidized silicon substrates have field-effect mobility larger than 0.1 cm2/Vs, current on/off ratio greater than 106, negative threshold voltage, and subthreshold slope of 1 V/decade.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2925-2927 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 80 |
| Issue number | 16 |
| DOIs | |
| State | Published - Apr 22 2002 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)