Thin Film Transistors Using Wafer-Scale Low-Temperature MOCVD WSe2

Yiyang Gong; Xiaotian Zhang; Joan M. Redwing; Thomas N. Jackson

doi:10.1007/s11664-016-4987-2

Thin Film Transistors Using Wafer-Scale Low-Temperature MOCVD WSe₂

Yiyang Gong, Xiaotian Zhang, Joan M. Redwing, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We report on thin film transistors using continuous WSe₂ thin films synthesized by metal organic chemical vapor deposition at 400°C. O₂ plasma etching is used to provide precise thickness modification of the WSe₂ thin film with an etch rate ∼0.25 nm/min. Device performance is found to vary with the thickness of the WSe₂ films. P-channel thin film transistors with plasma-thinned 3 nm WSe₂ channels have mobility ∼0.01 cm²/Vs and current on–off ratio greater than 10⁴. Our results suggest that plasma etching may provide an approach for post-growth modification of the electrical properties of two-dimensional transition metal dichalcogenide thin films.

Original language	English (US)
Pages (from-to)	6280-6284
Number of pages	5
Journal	Journal of Electronic Materials
Volume	45
Issue number	12
DOIs	https://doi.org/10.1007/s11664-016-4987-2
State	Published - Dec 1 2016

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-016-4987-2

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title = "Thin Film Transistors Using Wafer-Scale Low-Temperature MOCVD WSe2",

abstract = "We report on thin film transistors using continuous WSe2 thin films synthesized by metal organic chemical vapor deposition at 400°C. O2 plasma etching is used to provide precise thickness modification of the WSe2 thin film with an etch rate ∼0.25 nm/min. Device performance is found to vary with the thickness of the WSe2 films. P-channel thin film transistors with plasma-thinned 3 nm WSe2 channels have mobility ∼0.01 cm2/Vs and current on–off ratio greater than 104. Our results suggest that plasma etching may provide an approach for post-growth modification of the electrical properties of two-dimensional transition metal dichalcogenide thin films.",

author = "Yiyang Gong and Xiaotian Zhang and Redwing, {Joan M.} and Jackson, {Thomas N.}",

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T1 - Thin Film Transistors Using Wafer-Scale Low-Temperature MOCVD WSe2

AU - Gong, Yiyang

AU - Zhang, Xiaotian

AU - Redwing, Joan M.

AU - Jackson, Thomas N.

PY - 2016/12/1

Y1 - 2016/12/1

N2 - We report on thin film transistors using continuous WSe2 thin films synthesized by metal organic chemical vapor deposition at 400°C. O2 plasma etching is used to provide precise thickness modification of the WSe2 thin film with an etch rate ∼0.25 nm/min. Device performance is found to vary with the thickness of the WSe2 films. P-channel thin film transistors with plasma-thinned 3 nm WSe2 channels have mobility ∼0.01 cm2/Vs and current on–off ratio greater than 104. Our results suggest that plasma etching may provide an approach for post-growth modification of the electrical properties of two-dimensional transition metal dichalcogenide thin films.

AB - We report on thin film transistors using continuous WSe2 thin films synthesized by metal organic chemical vapor deposition at 400°C. O2 plasma etching is used to provide precise thickness modification of the WSe2 thin film with an etch rate ∼0.25 nm/min. Device performance is found to vary with the thickness of the WSe2 films. P-channel thin film transistors with plasma-thinned 3 nm WSe2 channels have mobility ∼0.01 cm2/Vs and current on–off ratio greater than 104. Our results suggest that plasma etching may provide an approach for post-growth modification of the electrical properties of two-dimensional transition metal dichalcogenide thin films.

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Thin Film Transistors Using Wafer-Scale Low-Temperature MOCVD WSe₂

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