Thin films of magnetically doped topological insulator with carrier-independent long-range ferromagnetic order

Cui Zu Chang; Jinsong Zhang; Minhao Liu; Zuocheng Zhang; Xiao Feng; Kang Li; Li Li Wang; Xi Chen; Xi Dai; Zhong Fang; Xiao Liang Qi; Shou Cheng Zhang; Yayu Wang; Ke He; Xu Cun Ma; Qi Kun Xue

doi:10.1002/adma.201203493

Thin films of magnetically doped topological insulator with carrier-independent long-range ferromagnetic order

Cui Zu Chang, Jinsong Zhang, Minhao Liu, Zuocheng Zhang, Xiao Feng, Kang Li, Li Li Wang, Xi Chen, Xi Dai, Zhong Fang, Xiao Liang Qi, Shou Cheng Zhang, Yayu Wang, Ke He, Xu Cun Ma, Qi Kun Xue

Physics

Research output: Contribution to journal › Article › peer-review

253 Scopus citations

Abstract

Thin films of magnetically doped topological insulators Cr _0.22(Bi_xSb_1-x)_1.78Te₃ are found to possess carrier-independent long-range ferromagnetic order with perpendicular magnetic anisotropy. The anomalous Hall resistance is greatly enhanced, up to one quarter of quantum Hall resistance, by depletion of the carriers. The results demonstrate this material as a promising system to realize the quantized anomalous Hall effect.

Original language	English (US)
Pages (from-to)	1065-1070
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	7
DOIs	https://doi.org/10.1002/adma.201203493
State	Published - Feb 20 2013

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201203493

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title = "Thin films of magnetically doped topological insulator with carrier-independent long-range ferromagnetic order",

abstract = "Thin films of magnetically doped topological insulators Cr 0.22(BixSb1-x)1.78Te3 are found to possess carrier-independent long-range ferromagnetic order with perpendicular magnetic anisotropy. The anomalous Hall resistance is greatly enhanced, up to one quarter of quantum Hall resistance, by depletion of the carriers. The results demonstrate this material as a promising system to realize the quantized anomalous Hall effect.",

author = "Chang, {Cui Zu} and Jinsong Zhang and Minhao Liu and Zuocheng Zhang and Xiao Feng and Kang Li and Wang, {Li Li} and Xi Chen and Xi Dai and Zhong Fang and Qi, {Xiao Liang} and Zhang, {Shou Cheng} and Yayu Wang and Ke He and Ma, {Xu Cun} and Xue, {Qi Kun}",

year = "2013",

month = feb,

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doi = "10.1002/adma.201203493",

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T1 - Thin films of magnetically doped topological insulator with carrier-independent long-range ferromagnetic order

AU - Chang, Cui Zu

AU - Zhang, Jinsong

AU - Liu, Minhao

AU - Zhang, Zuocheng

AU - Feng, Xiao

AU - Li, Kang

AU - Wang, Li Li

AU - Chen, Xi

AU - Dai, Xi

AU - Fang, Zhong

AU - Qi, Xiao Liang

AU - Zhang, Shou Cheng

AU - Wang, Yayu

AU - He, Ke

AU - Ma, Xu Cun

AU - Xue, Qi Kun

PY - 2013/2/20

Y1 - 2013/2/20

N2 - Thin films of magnetically doped topological insulators Cr 0.22(BixSb1-x)1.78Te3 are found to possess carrier-independent long-range ferromagnetic order with perpendicular magnetic anisotropy. The anomalous Hall resistance is greatly enhanced, up to one quarter of quantum Hall resistance, by depletion of the carriers. The results demonstrate this material as a promising system to realize the quantized anomalous Hall effect.

AB - Thin films of magnetically doped topological insulators Cr 0.22(BixSb1-x)1.78Te3 are found to possess carrier-independent long-range ferromagnetic order with perpendicular magnetic anisotropy. The anomalous Hall resistance is greatly enhanced, up to one quarter of quantum Hall resistance, by depletion of the carriers. The results demonstrate this material as a promising system to realize the quantized anomalous Hall effect.

UR - http://www.scopus.com/inward/record.url?scp=84874069941&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84874069941&partnerID=8YFLogxK

U2 - 10.1002/adma.201203493

DO - 10.1002/adma.201203493

M3 - Article

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SN - 0935-9648

VL - 25

SP - 1065

EP - 1070

JO - Advanced Materials

JF - Advanced Materials

IS - 7

ER -

Thin films of magnetically doped topological insulator with carrier-independent long-range ferromagnetic order

Abstract

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