Thinking MOSFETs

Tom Jackson

doi:10.1109/TED.2025.3526127

Thinking MOSFETs

Tom Jackson

Research output: Contribution to journal › Article › peer-review

Abstract

The equations typically taught and used to estimate the threshold voltage for MOSFETs, based on the band bending in the MOSFET channel, are simple and easy to develop. However, they work well only for a subset of MOSFET types that do not include the MOSFETs of greatest interest today, including finFETs, nanosheet FETs, and most thin-film transistors (TFTs). This note provides an alternative, where threshold voltage is understood as moving the Fermi level to near the relevant band edge (conduction band minimum for n-channel MOSFETs or valence band maximum for p-channel MOSFETs).

Original language	English (US)
Pages (from-to)	1520-1522
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	72
Issue number	3
DOIs	https://doi.org/10.1109/TED.2025.3526127
State	Published - 2025

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2025.3526127

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title = "Thinking MOSFETs",

abstract = "The equations typically taught and used to estimate the threshold voltage for MOSFETs, based on the band bending in the MOSFET channel, are simple and easy to develop. However, they work well only for a subset of MOSFET types that do not include the MOSFETs of greatest interest today, including finFETs, nanosheet FETs, and most thin-film transistors (TFTs). This note provides an alternative, where threshold voltage is understood as moving the Fermi level to near the relevant band edge (conduction band minimum for n-channel MOSFETs or valence band maximum for p-channel MOSFETs).",

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AB - The equations typically taught and used to estimate the threshold voltage for MOSFETs, based on the band bending in the MOSFET channel, are simple and easy to develop. However, they work well only for a subset of MOSFET types that do not include the MOSFETs of greatest interest today, including finFETs, nanosheet FETs, and most thin-film transistors (TFTs). This note provides an alternative, where threshold voltage is understood as moving the Fermi level to near the relevant band edge (conduction band minimum for n-channel MOSFETs or valence band maximum for p-channel MOSFETs).

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Thinking MOSFETs

Abstract

All Science Journal Classification (ASJC) codes

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