TY - JOUR
T1 - Three-dimensional integration of two-dimensional field-effect transistors
AU - Jayachandran, Darsith
AU - Pendurthi, Rahul
AU - Sadaf, Muhtasim Ul Karim
AU - Sakib, Najam U.
AU - Pannone, Andrew
AU - Chen, Chen
AU - Han, Ying
AU - Trainor, Nicholas
AU - Kumari, Shalini
AU - Mc Knight, Thomas V.
AU - Redwing, Joan M.
AU - Yang, Yang
AU - Das, Saptarshi
N1 - Publisher Copyright:
© 2024, The Author(s), under exclusive licence to Springer Nature Limited.
PY - 2024/1/11
Y1 - 2024/1/11
N2 - In the field of semiconductors, three-dimensional (3D) integration not only enables packaging of more devices per unit area, referred to as ‘More Moore’ 1 but also introduces multifunctionalities for ‘More than Moore’ 2 technologies. Although silicon-based 3D integrated circuits are commercially available 3–5, there is limited effort on 3D integration of emerging nanomaterials 6,7 such as two-dimensional (2D) materials despite their unique functionalities 7–10. Here we demonstrate (1) wafer-scale and monolithic two-tier 3D integration based on MoS2 with more than 10,000 field-effect transistors (FETs) in each tier; (2) three-tier 3D integration based on both MoS2 and WSe2 with about 500 FETs in each tier; and (3) two-tier 3D integration based on 200 scaled MoS2 FETs (channel length, L CH = 45 nm) in each tier. We also realize a 3D circuit and demonstrate multifunctional capabilities, including sensing and storage. We believe that our demonstrations will serve as the foundation for more sophisticated, highly dense and functionally divergent integrated circuits with a larger number of tiers integrated monolithically in the third dimension.
AB - In the field of semiconductors, three-dimensional (3D) integration not only enables packaging of more devices per unit area, referred to as ‘More Moore’ 1 but also introduces multifunctionalities for ‘More than Moore’ 2 technologies. Although silicon-based 3D integrated circuits are commercially available 3–5, there is limited effort on 3D integration of emerging nanomaterials 6,7 such as two-dimensional (2D) materials despite their unique functionalities 7–10. Here we demonstrate (1) wafer-scale and monolithic two-tier 3D integration based on MoS2 with more than 10,000 field-effect transistors (FETs) in each tier; (2) three-tier 3D integration based on both MoS2 and WSe2 with about 500 FETs in each tier; and (3) two-tier 3D integration based on 200 scaled MoS2 FETs (channel length, L CH = 45 nm) in each tier. We also realize a 3D circuit and demonstrate multifunctional capabilities, including sensing and storage. We believe that our demonstrations will serve as the foundation for more sophisticated, highly dense and functionally divergent integrated circuits with a larger number of tiers integrated monolithically in the third dimension.
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U2 - 10.1038/s41586-023-06860-5
DO - 10.1038/s41586-023-06860-5
M3 - Article
C2 - 38200300
AN - SCOPUS:85181892374
SN - 0028-0836
VL - 625
SP - 276
EP - 281
JO - Nature
JF - Nature
IS - 7994
ER -