Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors

S. L. Wright; P. M. Solomon; H. Baratte; D. C. LaTulipe; T. N. Jackson

doi:10.1063/1.104900

Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors

S. L. Wright, P. M. Solomon, H. Baratte, D. C. LaTulipe, T. N. Jackson

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Pseudomorphic (In,Ga)As layers are used in GaAs-based semiconductor- insulator- semiconductor (SIS) structures to shift the threshold voltage from the natural, near-zero value. The threshold voltage is shifted positively for (In,Ga)As gate layers, and negatively for (In,Ga)As channel layers, by the (In,Ga)As/GaAs conduction-band offset. The thermionic and field emission barrier heights agree with shifts obtained in capacitance-voltage characteristics. The structures withstand implant activation anneals, establishing a simple technology to create either enhancement or depletion-mode devices.

Original language	English (US)
Pages (from-to)	2285-2287
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	20
DOIs	https://doi.org/10.1063/1.104900
State	Published - 1991

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.104900

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title = "Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors",

abstract = "Pseudomorphic (In,Ga)As layers are used in GaAs-based semiconductor- insulator- semiconductor (SIS) structures to shift the threshold voltage from the natural, near-zero value. The threshold voltage is shifted positively for (In,Ga)As gate layers, and negatively for (In,Ga)As channel layers, by the (In,Ga)As/GaAs conduction-band offset. The thermionic and field emission barrier heights agree with shifts obtained in capacitance-voltage characteristics. The structures withstand implant activation anneals, establishing a simple technology to create either enhancement or depletion-mode devices.",

author = "Wright, \{S. L.\} and Solomon, \{P. M.\} and H. Baratte and LaTulipe, \{D. C.\} and Jackson, \{T. N.\}",

year = "1991",

doi = "10.1063/1.104900",

language = "English (US)",

volume = "58",

pages = "2285--2287",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors

AU - Wright, S. L.

AU - Solomon, P. M.

AU - Baratte, H.

AU - LaTulipe, D. C.

AU - Jackson, T. N.

PY - 1991

Y1 - 1991

N2 - Pseudomorphic (In,Ga)As layers are used in GaAs-based semiconductor- insulator- semiconductor (SIS) structures to shift the threshold voltage from the natural, near-zero value. The threshold voltage is shifted positively for (In,Ga)As gate layers, and negatively for (In,Ga)As channel layers, by the (In,Ga)As/GaAs conduction-band offset. The thermionic and field emission barrier heights agree with shifts obtained in capacitance-voltage characteristics. The structures withstand implant activation anneals, establishing a simple technology to create either enhancement or depletion-mode devices.

AB - Pseudomorphic (In,Ga)As layers are used in GaAs-based semiconductor- insulator- semiconductor (SIS) structures to shift the threshold voltage from the natural, near-zero value. The threshold voltage is shifted positively for (In,Ga)As gate layers, and negatively for (In,Ga)As channel layers, by the (In,Ga)As/GaAs conduction-band offset. The thermionic and field emission barrier heights agree with shifts obtained in capacitance-voltage characteristics. The structures withstand implant activation anneals, establishing a simple technology to create either enhancement or depletion-mode devices.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors

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