Threshold-voltage bias-instability in SiC MOSFETs: effects of stress temperature and level on oxide charge buildup and recovery

Amartya K. Ghosh, Jifa Hao, Michael Cook, Samia A. Suliman, Xinyu Wang, Osama O. Awadelkarim

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Fingerprint

Dive into the research topics of 'Threshold-voltage bias-instability in SiC MOSFETs: effects of stress temperature and level on oxide charge buildup and recovery'. Together they form a unique fingerprint.

Physics & Astronomy

Engineering & Materials Science

Chemical Compounds