Threshold voltage variation of nanoscale strained Si/Si _1-xGe_x MOSFETs in the presence of punch through effect

In this paper, the punch through effect on the shift of the threshold voltage of nanoscale strained Si/Si_1-xGe_x MOSFET is proposed. Our model includes the impact of drain voltage, source/drain junction depth, germanium content, channel length, and doping concentration. The goal of this model is to investigate the punch through effect on the threshold voltage variation compared to the short channel effects approach, particularly with an increased drain voltage. Threshold voltage lowering due to the short channel effects and carrier quantization of quantum effects are also included. The developed analytical threshold voltage model demonstrated a good accuracy when compared to the published data.