Threshold voltage variation of nanoscale strained Si/Si _1-xGe_x MOSFETs in the presence of punch through effect

Keyphrases

• MOSFET 100%
• Through Effect 100%
• Punching 100%
• Strained Si 100%
• Threshold Voltage Shift 100%
• Short Channel Effects 66%
• Threshold Voltage 66%
• Drain Voltage 66%
• Doping Concentration 33%
• Published Data 33%
• Good Accuracy 33%
• Quantum Effects 33%
• Threshold Voltage Distribution 33%
• Si1-xGex 33%
• Channel Length 33%
• Analytical Threshold 33%
• Voltage Source 33%
• Germanium Content 33%

Engineering

• Junction Depth 50%
• Drain Junction 50%