Tight-binding investigation of electron tunneling through ultrathin SiO2 gate oxides

M. Städele; B. R. Tuttle; K. Hess; L. F. Register

doi:10.1006/spmi.2000.0850

Tight-binding investigation of electron tunneling through ultrathin SiO₂ gate oxides

M. Städele
, B. R. Tuttle
, K. Hess
, L. F. Register

School of Science (Behrend)

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

We investigate electron tunneling through ultrathin gate oxides using scattering theory within a tight-binding framework. We employ Si[100]/SiO₂/Si[100] model junctions with oxide thicknesses between 7 and 18 angstroms. This approach accounts for the three-dimensional microscopic structure of the model junctions and for the three-dimensional nature of the corresponding complex energy bands. The equilibrium positions of the atoms in the heterostructure are derived from first-principles density-functional calculations. We show that the present method yields qualitative and quantitative differences from conventional effective-mass theory.

Original language	English (US)
Pages (from-to)	405-409
Number of pages	5
Journal	Superlattices and Microstructures
Volume	27
Issue number	5
DOIs	https://doi.org/10.1006/spmi.2000.0850
State	Published - May 2000
Event	3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA Duration: Dec 6 1999 → Dec 10 1999

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.2000.0850

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title = "Tight-binding investigation of electron tunneling through ultrathin SiO2 gate oxides",

abstract = "We investigate electron tunneling through ultrathin gate oxides using scattering theory within a tight-binding framework. We employ Si[100]/SiO2/Si[100] model junctions with oxide thicknesses between 7 and 18 angstroms. This approach accounts for the three-dimensional microscopic structure of the model junctions and for the three-dimensional nature of the corresponding complex energy bands. The equilibrium positions of the atoms in the heterostructure are derived from first-principles density-functional calculations. We show that the present method yields qualitative and quantitative differences from conventional effective-mass theory.",

author = "M. St{\"a}dele and Tuttle, \{B. R.\} and K. Hess and Register, \{L. F.\}",

note = "Funding Information: Acknowledgements—We are indebted to A. di Carlo, Y. C. Chang, J. A. Majewski, R. M. Martin, and C. Strahberger for many fruitful discussions and to P. Vogl for sharing his bulk TB code. We also would like to acknowledge funding from the ONR (MURI Grant No. N00014-98-I-0604). Most of the calculations were performed on SGI-ORIGIN2000 machines at NCSA in Urbana, IL. K. H. and L. F. R. also acknowledge support from ARO, DAAG55-98-1-0306.; 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) ; Conference date: 06-12-1999 Through 10-12-1999",

year = "2000",

month = may,

doi = "10.1006/spmi.2000.0850",

language = "English (US)",

volume = "27",

pages = "405--409",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

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}

TY - JOUR

T1 - Tight-binding investigation of electron tunneling through ultrathin SiO2 gate oxides

AU - Städele, M.

AU - Tuttle, B. R.

AU - Hess, K.

AU - Register, L. F.

N1 - Funding Information: Acknowledgements—We are indebted to A. di Carlo, Y. C. Chang, J. A. Majewski, R. M. Martin, and C. Strahberger for many fruitful discussions and to P. Vogl for sharing his bulk TB code. We also would like to acknowledge funding from the ONR (MURI Grant No. N00014-98-I-0604). Most of the calculations were performed on SGI-ORIGIN2000 machines at NCSA in Urbana, IL. K. H. and L. F. R. also acknowledge support from ARO, DAAG55-98-1-0306.

PY - 2000/5

Y1 - 2000/5

N2 - We investigate electron tunneling through ultrathin gate oxides using scattering theory within a tight-binding framework. We employ Si[100]/SiO2/Si[100] model junctions with oxide thicknesses between 7 and 18 angstroms. This approach accounts for the three-dimensional microscopic structure of the model junctions and for the three-dimensional nature of the corresponding complex energy bands. The equilibrium positions of the atoms in the heterostructure are derived from first-principles density-functional calculations. We show that the present method yields qualitative and quantitative differences from conventional effective-mass theory.

AB - We investigate electron tunneling through ultrathin gate oxides using scattering theory within a tight-binding framework. We employ Si[100]/SiO2/Si[100] model junctions with oxide thicknesses between 7 and 18 angstroms. This approach accounts for the three-dimensional microscopic structure of the model junctions and for the three-dimensional nature of the corresponding complex energy bands. The equilibrium positions of the atoms in the heterostructure are derived from first-principles density-functional calculations. We show that the present method yields qualitative and quantitative differences from conventional effective-mass theory.

UR - https://www.scopus.com/pages/publications/0038568436

UR - https://www.scopus.com/pages/publications/0038568436#tab=citedBy

U2 - 10.1006/spmi.2000.0850

DO - 10.1006/spmi.2000.0850

M3 - Conference article

AN - SCOPUS:0038568436

SN - 0749-6036

VL - 27

SP - 405

EP - 409

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 5

T2 - 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99)

Y2 - 6 December 1999 through 10 December 1999

ER -

Tight-binding investigation of electron tunneling through ultrathin SiO₂ gate oxides

Abstract

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