Time domain thermoreflectance measurements and phonon gas modeling of the thermal conductivity of silicon doped indium phosphide pertinent to quantum cascade lasers

C. Perez, D. Talreja, J. Kirch, S. Zhang, V. Gopalan, D. Botez, B. M. Foley, B. Ramos-Alvarado, L. J. Mawst

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2 Scopus citations

Abstract

The thermal conductivity of Si-doped thin films of indium phosphide grown via metalorganic vapour-phase epitaxy at different carrier concentrations and thicknesses was measured from 80 to 450 K using time domain thermoreflectance. Additionally, phonon gas modeling was conducted to characterize the various scattering mechanisms that contribute to the thermal transport in these materials. A sensitivity analysis based on the phonon gas model showed that while thickness has a greater influence on the thermal conductivity than carrier concentration at the micron-scale for all samples, point defects due to Si-dopant atoms at carrier concentrations of ∼1019 cm-3, as well as the presence of extended defects that are most likely present due to dopant saturation, have a significant impact on thermal transport as a result of increased phonon scattering, decreasing the thermal conductivity by 40% or more.

Original languageEnglish (US)
Article number041107
JournalAPL Materials
Volume11
Issue number4
DOIs
StatePublished - Apr 1 2023

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • General Engineering

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