Abstract
The thermal conductivity of Si-doped thin films of indium phosphide grown via metalorganic vapour-phase epitaxy at different carrier concentrations and thicknesses was measured from 80 to 450 K using time domain thermoreflectance. Additionally, phonon gas modeling was conducted to characterize the various scattering mechanisms that contribute to the thermal transport in these materials. A sensitivity analysis based on the phonon gas model showed that while thickness has a greater influence on the thermal conductivity than carrier concentration at the micron-scale for all samples, point defects due to Si-dopant atoms at carrier concentrations of ∼1019 cm-3, as well as the presence of extended defects that are most likely present due to dopant saturation, have a significant impact on thermal transport as a result of increased phonon scattering, decreasing the thermal conductivity by 40% or more.
Original language | English (US) |
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Article number | 041107 |
Journal | APL Materials |
Volume | 11 |
Issue number | 4 |
DOIs | |
State | Published - Apr 1 2023 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- General Engineering