Time-resolved fluorescence up-conversion study of radiative recombination dynamics in III-nitride light emitting diodes over a wide bias range

Guanjun You; Jie Liu; Zhenyu Jiang; Yiming Zhu; Aping Chen; Yong Hu; Feng Xiong; Ron H. Henderson; Songlin Zhuang; Jian Xu

doi:10.1063/1.4819850

Time-resolved fluorescence up-conversion study of radiative recombination dynamics in III-nitride light emitting diodes over a wide bias range

Guanjun You
, Jie Liu
, Zhenyu Jiang
, Yiming Zhu
, Aping Chen
, Yong Hu
, Feng Xiong
, Ron H. Henderson
, Songlin Zhuang
, Jian Xu

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The technique of femtosecond fluorescence up-conversion was employed to explore the transient photoluminescence and carrier decay dynamics in c-plane (In,Ga)N multi-quantum-well light emitting diodes over a wide bias range. By investigating the bias dependence of initial transient photoluminescence intensity and the luminescence lifetime, the field and carrier density effects on the radiative recombination coefficient were revealed for both low and high current injection conditions, and in good agreement with the theory.

Original language	English (US)
Article number	121109
Journal	Applied Physics Letters
Volume	103
Issue number	12
DOIs	https://doi.org/10.1063/1.4819850
State	Published - Sep 16 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4819850

Cite this

@article{445a607e6c98407f80be1bfa0906d401,

title = "Time-resolved fluorescence up-conversion study of radiative recombination dynamics in III-nitride light emitting diodes over a wide bias range",

abstract = "The technique of femtosecond fluorescence up-conversion was employed to explore the transient photoluminescence and carrier decay dynamics in c-plane (In,Ga)N multi-quantum-well light emitting diodes over a wide bias range. By investigating the bias dependence of initial transient photoluminescence intensity and the luminescence lifetime, the field and carrier density effects on the radiative recombination coefficient were revealed for both low and high current injection conditions, and in good agreement with the theory.",

author = "Guanjun You and Jie Liu and Zhenyu Jiang and Yiming Zhu and Aping Chen and Yong Hu and Feng Xiong and Henderson, \{Ron H.\} and Songlin Zhuang and Jian Xu",

note = "Funding Information: The work at the Penn State University was supported by the National Science Foundation under Grant Nos. ECCS0846018 and ECCS0824186. The work at University of Shanghai for Science and Technology is supported by NSFC under grant 61078007, Shanghai Municipal Education Commission and Shanghai Education Development Foundation under Shu Guang Project 10SG46, Science and Technology Commission of Shanghai Municipality under Grant Nos. 1052nm07100 and 11530502200, and Program for New Century Excellent Talents in University.",

year = "2013",

month = sep,

day = "16",

doi = "10.1063/1.4819850",

language = "English (US)",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Time-resolved fluorescence up-conversion study of radiative recombination dynamics in III-nitride light emitting diodes over a wide bias range

AU - You, Guanjun

AU - Liu, Jie

AU - Jiang, Zhenyu

AU - Zhu, Yiming

AU - Chen, Aping

AU - Hu, Yong

AU - Xiong, Feng

AU - Henderson, Ron H.

AU - Zhuang, Songlin

AU - Xu, Jian

N1 - Funding Information: The work at the Penn State University was supported by the National Science Foundation under Grant Nos. ECCS0846018 and ECCS0824186. The work at University of Shanghai for Science and Technology is supported by NSFC under grant 61078007, Shanghai Municipal Education Commission and Shanghai Education Development Foundation under Shu Guang Project 10SG46, Science and Technology Commission of Shanghai Municipality under Grant Nos. 1052nm07100 and 11530502200, and Program for New Century Excellent Talents in University.

PY - 2013/9/16

Y1 - 2013/9/16

N2 - The technique of femtosecond fluorescence up-conversion was employed to explore the transient photoluminescence and carrier decay dynamics in c-plane (In,Ga)N multi-quantum-well light emitting diodes over a wide bias range. By investigating the bias dependence of initial transient photoluminescence intensity and the luminescence lifetime, the field and carrier density effects on the radiative recombination coefficient were revealed for both low and high current injection conditions, and in good agreement with the theory.

AB - The technique of femtosecond fluorescence up-conversion was employed to explore the transient photoluminescence and carrier decay dynamics in c-plane (In,Ga)N multi-quantum-well light emitting diodes over a wide bias range. By investigating the bias dependence of initial transient photoluminescence intensity and the luminescence lifetime, the field and carrier density effects on the radiative recombination coefficient were revealed for both low and high current injection conditions, and in good agreement with the theory.

UR - https://www.scopus.com/pages/publications/84884894846

UR - https://www.scopus.com/pages/publications/84884894846#tab=citedBy

U2 - 10.1063/1.4819850

DO - 10.1063/1.4819850

M3 - Article

AN - SCOPUS:84884894846

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 121109

ER -

Time-resolved fluorescence up-conversion study of radiative recombination dynamics in III-nitride light emitting diodes over a wide bias range

Abstract

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