Time-resolved photocurrent spectroscopic diagnostics of electrically active defects in AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on Si wafers
- Burcu Ozden
- , Min P. Khanal
- , Vahid Mirkhani
- , Kosala Yapabandara
- , Chungman Yang
- , Sangjong Ko
- , Suhyeon Youn
- , Michael C. Hamilton
- , Mobbassar Hassan Sk
- , Ayayi Claude Ahyi
- , Minseo Park
Research output: Contribution to journal › Article › peer-review
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