@inproceedings{0ca889311279489db66008a8eb62f0b8,
title = "TiN and ZrN based ohmic contacts to n-GaN",
abstract = "Metal electrical contacts that exhibit good thermal stability and desirable electrical characteristics are required for the development of high temperature devices based on the III-V nitrides. To make improvements on existing contacts or to develop new ones, information on the metallurgy of these contacts is needed. In this work, selected early transition metal-based ohmic contacts to n-GaN are examined from both a high-temperature materials chemistry and electrical standpoint.",
author = "Mohney, \{S. E.\} and Luther, \{B. P.\} and Wolter, \{S. D.\} and Jackson, \{T. N.\} and Karlicek, \{R. F.\} and Kern, \{R. S.\}",
note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 1998 4th International High Temperature Electronics Conference, HITEC 1998 ; Conference date: 14-06-1998 Through 18-06-1998",
year = "1998",
doi = "10.1109/HITEC.1998.676774",
language = "English (US)",
isbn = "0780345401",
series = "1998 4th International High Temperature Electronics Conference, HITEC 1998",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "134--137",
booktitle = "1998 4th International High Temperature Electronics Conference, HITEC 1998",
address = "United States",
}