Titanium and aluminum-titanium ohmic contacts to p-type SiC

J. Crofton; L. Beyer; J. R. Williams; E. D. Luckowski; S. E. Mohney; J. M. Delucca

doi:10.1016/S0038-1101(97)00168-8

Titanium and aluminum-titanium ohmic contacts to p-type SiC

J. Crofton, L. Beyer, J. R. Williams, E. D. Luckowski, S. E. Mohney, J. M. Delucca

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Abstract

Very low resistance ohmic contacts to p-type SiC were fabricated by depositing a 90-10 wt.% alloy of Al and Ti followed by a high temperature anneal of approximately 1000°C for 2 min. Specific contact resistances ranged from approximately 5 × 10^-6 to 3 × 10^-5 Ω cm² on material with a doping of 1.3 × 10¹⁹ cm^-3. The initial Al-Ti thickness before annealing was found to be critical to controlling the Al-Ti sheet resistance during the anneal. In addition, chemically etching the Al-Ti layer after annealing revealed pitting indicative of severe reaction between the Al-Ti and SiC surface, as confirmed by Rutherford Backscattering. In contrast, ohmic contacts to the same SiC material were fabricated by depositing pure Ti and annealing at 800°C for 1 min. These contacts were ohmic with a specific contact resistance between 2 × 10^-5 and 4 × 10^-5 Ω cm². Examination of the SiC surface after chemically etching away the annealed contact revealed a smooth surface, suggesting a much more planar Ti/SiC interface.

Original language	English (US)
Pages (from-to)	1725-1729
Number of pages	5
Journal	Solid-State Electronics
Volume	41
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1101(97)00168-8
State	Published - Nov 1997

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(97)00168-8

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title = "Titanium and aluminum-titanium ohmic contacts to p-type SiC",

abstract = "Very low resistance ohmic contacts to p-type SiC were fabricated by depositing a 90-10 wt.% alloy of Al and Ti followed by a high temperature anneal of approximately 1000°C for 2 min. Specific contact resistances ranged from approximately 5 × 10-6 to 3 × 10-5 Ω cm2 on material with a doping of 1.3 × 1019 cm-3. The initial Al-Ti thickness before annealing was found to be critical to controlling the Al-Ti sheet resistance during the anneal. In addition, chemically etching the Al-Ti layer after annealing revealed pitting indicative of severe reaction between the Al-Ti and SiC surface, as confirmed by Rutherford Backscattering. In contrast, ohmic contacts to the same SiC material were fabricated by depositing pure Ti and annealing at 800°C for 1 min. These contacts were ohmic with a specific contact resistance between 2 × 10-5 and 4 × 10-5 Ω cm2. Examination of the SiC surface after chemically etching away the annealed contact revealed a smooth surface, suggesting a much more planar Ti/SiC interface.",

author = "J. Crofton and L. Beyer and Williams, {J. R.} and Luckowski, {E. D.} and Mohney, {S. E.} and Delucca, {J. M.}",

note = "Funding Information: This work was supported by the Kentucky Space Grant Consortium, Murray State University, and by the Center for Commercial Development of Space Power and Advanced Electronics, located at Auburn University, with funds from NASA Cooperative Agreement NCC3-511, Auburn University, and the Center's industrial partners. The authors would like to acknowledge James Barnett and Chris Lamb for help with maintenance of the Murray State University accelerator, Tamara Isaacs-Smith for help with TLM measurements, Dr Rich Siergiej of the Northrop Grumman Corporation for reactive ion etching SiC samples, Dr Theresa Mayer for assistance with atomic force microscopy, and Brian Luther and Scott Wolter for assistance with Auger electron and X-ray photoelectron spectroscopy.",

year = "1997",

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doi = "10.1016/S0038-1101(97)00168-8",

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T1 - Titanium and aluminum-titanium ohmic contacts to p-type SiC

AU - Crofton, J.

AU - Beyer, L.

AU - Williams, J. R.

AU - Luckowski, E. D.

AU - Mohney, S. E.

AU - Delucca, J. M.

N1 - Funding Information: This work was supported by the Kentucky Space Grant Consortium, Murray State University, and by the Center for Commercial Development of Space Power and Advanced Electronics, located at Auburn University, with funds from NASA Cooperative Agreement NCC3-511, Auburn University, and the Center's industrial partners. The authors would like to acknowledge James Barnett and Chris Lamb for help with maintenance of the Murray State University accelerator, Tamara Isaacs-Smith for help with TLM measurements, Dr Rich Siergiej of the Northrop Grumman Corporation for reactive ion etching SiC samples, Dr Theresa Mayer for assistance with atomic force microscopy, and Brian Luther and Scott Wolter for assistance with Auger electron and X-ray photoelectron spectroscopy.

PY - 1997/11

Y1 - 1997/11

N2 - Very low resistance ohmic contacts to p-type SiC were fabricated by depositing a 90-10 wt.% alloy of Al and Ti followed by a high temperature anneal of approximately 1000°C for 2 min. Specific contact resistances ranged from approximately 5 × 10-6 to 3 × 10-5 Ω cm2 on material with a doping of 1.3 × 1019 cm-3. The initial Al-Ti thickness before annealing was found to be critical to controlling the Al-Ti sheet resistance during the anneal. In addition, chemically etching the Al-Ti layer after annealing revealed pitting indicative of severe reaction between the Al-Ti and SiC surface, as confirmed by Rutherford Backscattering. In contrast, ohmic contacts to the same SiC material were fabricated by depositing pure Ti and annealing at 800°C for 1 min. These contacts were ohmic with a specific contact resistance between 2 × 10-5 and 4 × 10-5 Ω cm2. Examination of the SiC surface after chemically etching away the annealed contact revealed a smooth surface, suggesting a much more planar Ti/SiC interface.

AB - Very low resistance ohmic contacts to p-type SiC were fabricated by depositing a 90-10 wt.% alloy of Al and Ti followed by a high temperature anneal of approximately 1000°C for 2 min. Specific contact resistances ranged from approximately 5 × 10-6 to 3 × 10-5 Ω cm2 on material with a doping of 1.3 × 1019 cm-3. The initial Al-Ti thickness before annealing was found to be critical to controlling the Al-Ti sheet resistance during the anneal. In addition, chemically etching the Al-Ti layer after annealing revealed pitting indicative of severe reaction between the Al-Ti and SiC surface, as confirmed by Rutherford Backscattering. In contrast, ohmic contacts to the same SiC material were fabricated by depositing pure Ti and annealing at 800°C for 1 min. These contacts were ohmic with a specific contact resistance between 2 × 10-5 and 4 × 10-5 Ω cm2. Examination of the SiC surface after chemically etching away the annealed contact revealed a smooth surface, suggesting a much more planar Ti/SiC interface.

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Titanium and aluminum-titanium ohmic contacts to p-type SiC

Abstract

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