Titanium and titanium nitride contacts to n-type gallium nitride

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Titanium and titanium nitride contacts were fabricated on n-type GaN and characterized by specific contact resistance measurements and by x-ray photoelectron spectroscopy depth profiling. Ti contacts were annealed between 400 and 900 °C in AR and N2 to observe the effects of annealing environment on ohmic contact formation. Ti contacts annealed in N2 became ohmic after 1 min at 700 °C and reacted at minimum specific contact resistance of 4×10-6 Ω cm2 after 1 min at 800 °C. Ti contacts annealed in Ar required 20-25 min at 700 °C to become ohmic and also reached a minimum specific contact resistance after 1 min at 900 °C. Depth profiles of Ti contacts showed that the presence of TiN at the metal GaN interface was necessary for ohmic contact formation.

Original languageEnglish (US)
Pages (from-to)1322-1327
Number of pages6
JournalSemiconductor Science and Technology
Issue number11
StatePublished - Nov 1 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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