Top-gated field effect devices using oxidized silicon nanowires

Keyphrases

• Silicon Nanowires (SiNWs) 100%
• Field-effect Device 100%
• Top Gate 100%
• Silicon Nanowire Field-effect Transistor (SNWFET) 80%
• P-silicon 60%
• Silica 40%
• On-state Current 40%
• Catalyst Particle 20%
• Subthreshold 20%
• Subthreshold Slope 20%
• Gate Dielectric 20%
• Hysteresis 20%
• Threshold Voltage 20%
• Trimethyl Borate 20%
• Back-gate Voltage 20%
• Au Catalyst 20%
• Self-aligned 20%
• PH 3 20%
• Vapor-liquid-solid 10%
• Gas Source 10%
• Transmission Electron Microscopy 10%
• As-grown 10%
• Order of Magnitude 10%
• Si Substrate 10%
• Non-self 10%
• State of Charge 10%
• Field-effect Transistors 10%
• Contact Resistance 10%
• Schottky Barrier 10%
• Semiconductor Nanowires 10%
• Electron Carrier 10%
• Density of States 10%
• Field-effect Mobility 10%
• Electron Microscopy Studies 10%
• Potential Gains 10%
• Thermal Oxidation 10%
• N-type Dopant 10%
• P-type Dopant 10%
• Vapor-liquid-solid Growth 10%
• N-Si 10%
• Silicon Nitride 10%
• Developing Strategy 10%
• Sweep Direction 10%
• Subthreshold Characteristics 10%
• Carrier Concentration 10%
• Back Gate 10%
• Passivation 10%
• Low Pressure Chemical Vapor Deposition (LPCVD) 10%
• Interfacial Properties 10%
• Carrier Density 10%
• Bottom-up Integration 10%
• Complementary Circuits 10%
• Logic Circuit 10%
• Memory Circuits 10%
• Oxide Shell 10%
• Sensing Circuit 10%
• Operational Stability 10%
• Sweep Rate 10%
• Breakdown Field Strength 10%
• Gate Modulation 10%
• Nanoelectronic Applications 10%
• Phosphine 10%
• Interface Charge 10%

Material Science

• Silicon 100%
• Nanowire 100%
• Field Effect Transistor 47%
• Dielectric Material 15%
• Electronic Circuit 10%
• Doping (Additives) 10%
• Carrier Concentration 10%
• Density 5%
• Oxide Compound 5%
• Transmission Electron Microscopy 5%
• Oxidation Reaction 5%
• Contact Resistance 5%
• Schottky Barrier 5%
• Low Pressure Chemical Vapor Deposition 5%
• Interface Property 5%

Engineering

• Nanowire 100%
• Field-Effect Transistor 47%
• Gate Dielectric 15%
• Catalyst Particle 10%
• Gate Voltage 10%
• Dopants 10%
• Subthreshold Slope 10%
• Au Catalyst 10%
• Carrier Concentration 10%
• Source Gas 5%
• Field Strength 5%
• Si Substrate 5%
• Schottky Barrier 5%
• Test Structure 5%
• Breakdown Field 5%
• Nanoelectronics 5%
• Thermal Oxidation 5%
• Passivation 5%
• Potential Benefit 5%
• Injection Efficiency 5%
• Charge State 5%