Top-gated graphene field-effect transistors using graphene on si (111) wafers

J. S. Moon; D. Curtis; S. Bui; T. Marshall; D. Wheeler; I. Valles; S. Kim; E. Wang; X. Weng; M. Fanton

doi:10.1109/LED.2010.2065792

Top-gated graphene field-effect transistors using graphene on si (111) wafers

J. S. Moon, D. Curtis, S. Bui, T. Marshall, D. Wheeler, I. Valles, S. Kim, E. Wang, X. Weng, M. Fanton

Applied Research Laboratory (ARL)

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

In this letter, we report the first experimental demonstration of wafer-scale ambipolar field-effect transistor (FET) on Si (111) substrates by synthesizing a graphene layer on top of 3CSiC(111)/Si(111) substrates. With lateral scaling of the sourcedrain distance to 1 μm in a top-gated layout, the on-state current of 225 μA/μm and peak transconductance of 40\μS/μm were obtained at Vds = 2\V, which is the highest performance of graphene-on-Si FETs. The peak field-effect mobilities of 285 cm²/Vs for holes and 175 cm²/Vs for electrons were demonstrated, which is higher than that of ultra-thin-body SOI (n, p) MOSFETs.

Original language	English (US)
Article number	5565389
Pages (from-to)	1193-1195
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	11
DOIs	https://doi.org/10.1109/LED.2010.2065792
State	Published - Nov 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2010.2065792

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title = "Top-gated graphene field-effect transistors using graphene on si (111) wafers",

abstract = "In this letter, we report the first experimental demonstration of wafer-scale ambipolar field-effect transistor (FET) on Si (111) substrates by synthesizing a graphene layer on top of 3CSiC(111)/Si(111) substrates. With lateral scaling of the sourcedrain distance to 1 μm in a top-gated layout, the on-state current of 225 μA/μm and peak transconductance of 40\μS/μm were obtained at Vds = 2\V, which is the highest performance of graphene-on-Si FETs. The peak field-effect mobilities of 285 cm2/Vs for holes and 175 cm2/Vs for electrons were demonstrated, which is higher than that of ultra-thin-body SOI (n, p) MOSFETs.",

author = "Moon, {J. S.} and D. Curtis and S. Bui and T. Marshall and D. Wheeler and I. Valles and S. Kim and E. Wang and X. Weng and M. Fanton",

note = "Funding Information: Manuscript received July 11, 2010; revised August 2, 2010; accepted August 3, 2010. Date of publication September 7, 2010; date of current version October 22, 2010. This work was supported by the Defense Advanced Research Projects Agency (DARPA), monitored by Dr. John Albrecht at DARPA, under SPAWAR contract N66001-08-C-2048. The views, opinions, and/or findings contained in this letter are those of the author/presenter and should not be interpreted as representing the official views or policies, either expressed or implied, of the Defense Advanced Research Projects Agency or the Department of Defense. The review of this letter was arranged by Editor J. Cai.",

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AU - Moon, J. S.

AU - Curtis, D.

AU - Bui, S.

AU - Marshall, T.

AU - Wheeler, D.

AU - Valles, I.

AU - Kim, S.

AU - Wang, E.

AU - Weng, X.

AU - Fanton, M.

N1 - Funding Information: Manuscript received July 11, 2010; revised August 2, 2010; accepted August 3, 2010. Date of publication September 7, 2010; date of current version October 22, 2010. This work was supported by the Defense Advanced Research Projects Agency (DARPA), monitored by Dr. John Albrecht at DARPA, under SPAWAR contract N66001-08-C-2048. The views, opinions, and/or findings contained in this letter are those of the author/presenter and should not be interpreted as representing the official views or policies, either expressed or implied, of the Defense Advanced Research Projects Agency or the Department of Defense. The review of this letter was arranged by Editor J. Cai.

PY - 2010/11

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N2 - In this letter, we report the first experimental demonstration of wafer-scale ambipolar field-effect transistor (FET) on Si (111) substrates by synthesizing a graphene layer on top of 3CSiC(111)/Si(111) substrates. With lateral scaling of the sourcedrain distance to 1 μm in a top-gated layout, the on-state current of 225 μA/μm and peak transconductance of 40\μS/μm were obtained at Vds = 2\V, which is the highest performance of graphene-on-Si FETs. The peak field-effect mobilities of 285 cm2/Vs for holes and 175 cm2/Vs for electrons were demonstrated, which is higher than that of ultra-thin-body SOI (n, p) MOSFETs.

AB - In this letter, we report the first experimental demonstration of wafer-scale ambipolar field-effect transistor (FET) on Si (111) substrates by synthesizing a graphene layer on top of 3CSiC(111)/Si(111) substrates. With lateral scaling of the sourcedrain distance to 1 μm in a top-gated layout, the on-state current of 225 μA/μm and peak transconductance of 40\μS/μm were obtained at Vds = 2\V, which is the highest performance of graphene-on-Si FETs. The peak field-effect mobilities of 285 cm2/Vs for holes and 175 cm2/Vs for electrons were demonstrated, which is higher than that of ultra-thin-body SOI (n, p) MOSFETs.

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Top-gated graphene field-effect transistors using graphene on si (111) wafers

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