@article{dc639d5da2d84cd396b452cf8af1add4,
title = "Topological insulator Bi2 Se3 thin films grown on double-layer graphene by molecular beam epitaxy",
abstract = "Atomically flat thin films of topological insulator Bi2 Se 3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2 Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2× 1011 /cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.",
author = "Song, {Can Li} and Wang, {Yi Lin} and Jiang, {Ye Ping} and Yi Zhang and Chang, {Cui Zu} and Lili Wang and Ke He and Xi Chen and Jia, {Jin Feng} and Yayu Wang and Zhong Fang and Xi Dai and Xie, {Xin Cheng} and Qi, {Xiao Liang} and Zhang, {Shou Cheng} and Xue, {Qi Kun} and Xucun Ma",
note = "Funding Information: This work was supported by National Science Foundation (Grant No. 10721404) and Ministry of Science and Technology of China (Grant No. 2009CB929400). X.L.Q. and S.C.Z. are supported by the Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under Contract No. DE-AC02-76SF00515. The STM topographic images were processed by WSXM software (www.nanotec.es).",
year = "2010",
month = oct,
day = "4",
doi = "10.1063/1.3494595",
language = "English (US)",
volume = "97",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "14",
}