Topological insulator Bi2 Se3 thin films grown on double-layer graphene by molecular beam epitaxy

Can Li Song; Yi Lin Wang; Ye Ping Jiang; Yi Zhang; Cui Zu Chang; Lili Wang; Ke He; Xi Chen; Jin Feng Jia; Yayu Wang; Zhong Fang; Xi Dai; Xin Cheng Xie; Xiao Liang Qi; Shou Cheng Zhang; Qi Kun Xue; Xucun Ma

doi:10.1063/1.3494595

Topological insulator Bi₂ Se₃ thin films grown on double-layer graphene by molecular beam epitaxy

Can Li Song
, Yi Lin Wang
, Ye Ping Jiang
, Yi Zhang
, Cui Zu Chang
, Lili Wang
, Ke He
, Xi Chen
, Jin Feng Jia
, Yayu Wang
, Zhong Fang
, Xi Dai
, Xin Cheng Xie
, Xiao Liang Qi
, Shou Cheng Zhang
, Qi Kun Xue
, Xucun Ma

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

179 Scopus citations

Abstract

Atomically flat thin films of topological insulator Bi₂ Se ₃ have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi₂ Se₃ films. The as-grown films without doping exhibit a low defect density of 1.0±0.2× 1011 /cm², and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

Original language	English (US)
Article number	143118
Journal	Applied Physics Letters
Volume	97
Issue number	14
DOIs	https://doi.org/10.1063/1.3494595
State	Published - Oct 4 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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Song, C. L., Wang, Y. L., Jiang, Y. P., Zhang, Y., Chang, C. Z., Wang, L., He, K., Chen, X., Jia, J. F., Wang, Y., Fang, Z., Dai, X., Xie, X. C., Qi, X. L., Zhang, S. C., Xue, Q. K., & Ma, X. (2010). Topological insulator Bi₂ Se₃ thin films grown on double-layer graphene by molecular beam epitaxy. Applied Physics Letters, 97(14), Article 143118. https://doi.org/10.1063/1.3494595

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title = "Topological insulator Bi2 Se3 thin films grown on double-layer graphene by molecular beam epitaxy",

abstract = "Atomically flat thin films of topological insulator Bi2 Se 3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2 Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2× 1011 /cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.",

author = "Song, \{Can Li\} and Wang, \{Yi Lin\} and Jiang, \{Ye Ping\} and Yi Zhang and Chang, \{Cui Zu\} and Lili Wang and Ke He and Xi Chen and Jia, \{Jin Feng\} and Yayu Wang and Zhong Fang and Xi Dai and Xie, \{Xin Cheng\} and Qi, \{Xiao Liang\} and Zhang, \{Shou Cheng\} and Xue, \{Qi Kun\} and Xucun Ma",

note = "Funding Information: This work was supported by National Science Foundation (Grant No. 10721404) and Ministry of Science and Technology of China (Grant No. 2009CB929400). X.L.Q. and S.C.Z. are supported by the Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under Contract No. DE-AC02-76SF00515. The STM topographic images were processed by WSXM software (www.nanotec.es).",

year = "2010",

month = oct,

day = "4",

doi = "10.1063/1.3494595",

language = "English (US)",

volume = "97",

journal = "Applied Physics Letters",

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T1 - Topological insulator Bi2 Se3 thin films grown on double-layer graphene by molecular beam epitaxy

AU - Song, Can Li

AU - Wang, Yi Lin

AU - Jiang, Ye Ping

AU - Zhang, Yi

AU - Chang, Cui Zu

AU - Wang, Lili

AU - He, Ke

AU - Chen, Xi

AU - Jia, Jin Feng

AU - Wang, Yayu

AU - Fang, Zhong

AU - Dai, Xi

AU - Xie, Xin Cheng

AU - Qi, Xiao Liang

AU - Zhang, Shou Cheng

AU - Xue, Qi Kun

AU - Ma, Xucun

N1 - Funding Information: This work was supported by National Science Foundation (Grant No. 10721404) and Ministry of Science and Technology of China (Grant No. 2009CB929400). X.L.Q. and S.C.Z. are supported by the Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under Contract No. DE-AC02-76SF00515. The STM topographic images were processed by WSXM software (www.nanotec.es).

PY - 2010/10/4

Y1 - 2010/10/4

N2 - Atomically flat thin films of topological insulator Bi2 Se 3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2 Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2× 1011 /cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

AB - Atomically flat thin films of topological insulator Bi2 Se 3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2 Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2× 1011 /cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143118

ER -

Topological insulator Bi₂ Se₃ thin films grown on double-layer graphene by molecular beam epitaxy

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