@inproceedings{44e5f2ceaf5142a0b1d0c256db65a9b3,
title = "Total Dose Effects and Single Event Upsets during Radiation Damage of GaN and SiC",
abstract = "SiC and GaN power devices are used in the automotive, wireless, and industrial power markets, but their adoption into space and avionic applications is hindered by their susceptibility to permanent degradation and catastrophic failure from heavy-ion exposure. Efforts to space-qualify wide bandgap power devices have revealed that they are susceptible to damage from the high-energy, heavy-ion space radiation environment (galactic cosmic rays) that cannot be shielded. GaN and SiC transistors have shown failure susceptibility at about 50% of the rated voltage. SiC components have demonstrated susceptibility to radiation damage under heavy-ion single-event effects testing, reducing their utility in the space galactic cosmic ray (GCR) environment. In SiC-based Schottky diodes, catastrophic single-event burnout (SEB) and other single-event effects (SEE) have been observed at ∼40% of the rated operating voltage, as well as an unacceptable degradation in leakage current at ∼20% of the rated operating voltage.",
author = "Ani Khachatrian and Adrian Ildefonso and Zahabul Islam and Rasel, {Md Abu Jafar} and Amanul Haque and Jihyun Kim and Fan Ren and Minghan Xian and Pearton, {Stephen J.}",
note = "Publisher Copyright: {\textcopyright} 2021 ECS - The Electrochemical Society.; 240th ECS Meeting ; Conference date: 10-10-2021 Through 14-10-2021",
year = "2021",
doi = "10.1149/10407.0013ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "IOP Publishing Ltd.",
number = "7",
pages = "13--34",
booktitle = "240th ECS Meeting - Gallium Nitride and Silicon Carbide Power Technologies 11",
address = "United Kingdom",
edition = "7",
}