Total Ionizing Dose Effect in Tri-gate Silicon Ferroelectric Transistor Memory

Khandker Akif Aabrar, James Read, Sharadindu Gopal Kirtania, Sergei Stepanoff, Douglas E. Wolfe, Shimeng Yu, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

For the first time, we demonstrate the survivability of programmed states in a ferroelectric field effect transistor (FeFET) memory under gamma-ray irradiation. The un-irradiated Tri-gate Si FeFET (control) shows a large memory window (MW) of 1.6V, a high read current window of 2×105, a long retention of 2.3 times 10 {6} mathrm{s} (27 days) and high endurance (>108 cycles). The Tri-gate FeFETs, when exposed to radiation, retain ferroelectric hysteresis with a current window >102 up to a high radiation dose of 10Mrad. This confirms the survivability of the FeFETs and makes FeFET a potential candidate for data storage and compute-in-memory (CIM) in harsh ionizing environment. Analysis of array-level performance of FeFET-based CIM accelerator trained on CIFAR-10 dataset using VGG-8 neural network model under 5Mrad and 10Mrad radiation shows inference accuracy of 90% and 80%, respectively, versus 92% for control.

Original languageEnglish (US)
Title of host publication2022 International Electron Devices Meeting, IEDM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3271-3274
Number of pages4
ISBN (Electronic)9781665489591
DOIs
StatePublished - 2022
Event2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duration: Dec 3 2022Dec 7 2022

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2022-December
ISSN (Print)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Country/TerritoryUnited States
CitySan Francisco
Period12/3/2212/7/22

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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