Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random Access Memory Studied via Electrically Detected Magnetic Resonance
- Duane Jay McCrory
- , P. M. Lenahan
- , D. M. Nminibapiel
- , D. Veksler
- , J. T. Ryan
- , J. P. Campbell
Research output: Contribution to journal › Article › peer-review
10
Link opens in a new tab
Scopus
citations