Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random Access Memory Studied via Electrically Detected Magnetic Resonance

Duane Jay McCrory, P. M. Lenahan, D. M. Nminibapiel, D. Veksler, J. T. Ryan, J. P. Campbell

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

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