Toward new ferroelectric nitride materials and devices: Aluminum boron nitride and aluminum scandium nitride ferroelectric high electron mobility transistors (FerroHEMTs)

Joseph Casamento, John Hayden, Susan E. Trolier-McKinstry, Jon Paul Maria, Thai Son Nguyen, Kazuki Nomoto, Huili (Grace) Xing, Debdeep Jena

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The discovery of ferroelectricity in Al,ScN alloys was a result of efforts to enhance the piezoelectric coefficient and apply large biases for enhanced mechanical displacement in piezoelectric devices. This discovery prompted thought that substituting scandium on the cation sites in the wurtzite unit cell would change the local bonding environment and lower the energy needed to switch the polarization. This chapter discusses recent structural, chemical, and electrical data of a newer ferroelectric nitride, aluminum boron nitride, guided by similar chemical design principles. This chapter continues with a discussion behind a new device enabled by ferroelectricity in Al,ScN alloys, a ferroelectric high electron mobility transistor (FerroHEMT), and its integration with III-nitride electronics.

Original languageEnglish (US)
Title of host publicationSemiconductors and Semimetals
PublisherAcademic Press Inc.
DOIs
StateAccepted/In press - 2023

Publication series

NameSemiconductors and Semimetals
ISSN (Print)0080-8784

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this