Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning

  • Simon Escobar Steinvall
  • , Elias Z. Stutz
  • , Rajrupa Paul
  • , Mahdi Zamani
  • , Nelson Y. Dzade
  • , Valerio Piazza
  • , Martin Friedl
  • , Virginie De Mestral
  • , Jean Baptiste Leran
  • , Reza R. Zamani
  • , Anna Fontcuberta I Morral

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Large-scale deployment of thin-film photovoltaics will be facilitated through earth-abundant components. Herein, selective area epitaxy and lateral overgrowth epitaxy are explored for the growth of zinc phosphide (Zn3P2), a promising earth-abundant absorber. The ideal growth conditions are elucidated, and the nucleation of single-crystal nanopyramids that subsequently evolve towards coalesced thin-films is demonstrated. The zinc phosphide pyramids exhibit room temperature bandgap luminescence at 1.53 eV, indicating a high-quality material. The electrical properties of zinc phosphide and the junction with the substrate are assessed by conductive atomic force microscopy on n-type, p-type and intrinsic substrates. The measurements are consistent with the p-type characteristic of zinc phosphide. Overall, this constitutes a new, and transferrable, approach for the controlled and tunable growth of high-quality zinc phosphide, a step forward in the quest for earth-abundant photovoltaics.

Original languageEnglish (US)
Pages (from-to)326-332
Number of pages7
JournalNanoscale Advances
Volume3
Issue number2
DOIs
StatePublished - Jan 21 2021

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Atomic and Molecular Physics, and Optics
  • General Chemistry
  • General Materials Science
  • General Engineering

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