Abstract
Pristine graphene behaves like a zero-band-gap semiconductor and in order to develop electronic applications, it is highly desirable to open the band gap of graphene. In this context, doping constitutes a powerful route to tailor the electronic properties of graphene. In this review, we summarize the state-of-the-art achievements regarding the doping of graphene sheets and nanoribbons. The characterization techniques and applications of doped graphene sheets and nanoribbons are reviewed. Based on recent achievements, the perspectives and future research related to doped graphenes are discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 209-218 |
| Number of pages | 10 |
| Journal | Materials Letters |
| Volume | 78 |
| DOIs | |
| State | Published - Jul 1 2012 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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