@inproceedings{e3d8ea06e9874e75938f3c634865a69b,
title = "Towards the fabrication of ultra-thin SOI on Si (001) using epitaxial oxide and epitaxial semiconductor growth processes",
abstract = "Silicon on insulator (SOI) substrates will be required to reduce capacitive coupling and other parasitic effects as device scaling continues. ITRS projections point to a future need for SOI buried oxide layers as thin as 10 nm, and Si channel thickness potentially as low as 5 nm for fully-depleted ultra-thin-body devices. For such thin layers, conventional SOI fabrication processes become increasingly difficult. Progress towards fabricating ultra-thin SOI on Si(001) through an all-growth approach is presented. All steps are performed sequentially in situ, with no wet chemical processing. Starting with a Si wafer as large as 8{"}, our approach is to: 1) deposit a thin commensurate epitaxial oxide layer such as Ca1-xSr xTiO3; 2) oxidize to grow an interface SiO2: layer ('floating' the epitaxial oxide) for stress relief and lowering of the dielectric constant; and 3) deposit epitaxial Si or Si1-xGe x to complete the fabrication process. copyright The Electrochemical Society.",
author = "Lichtenwalner, \{Daniel J.\} and Hydrick, \{Jennifer M.\} and Viera Vankova and Veena Misra and Maria, \{Jon Paul\} and Kingon, \{Angus I.\}",
year = "2006",
doi = "10.1149/1.2355734",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "449--460",
booktitle = "Physics and Technology of High-k Gate Dielectrics 4",
edition = "3",
note = "Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",
}