Transient Analysis of TSV Equivalent Circuit Considering Nonlinear MOS Capacitance Effects

Stefano Piersanti, Francesco De Paulis, Antonio Orlandi, Madhavan Swaminathan, Vittorio Ricchiuti

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

An equivalent circuit model for the transient analysis of through-silicon vias (TSV) taking into account nonlinear metal-oxide-semiconductor effects is proposed. The model takes into account the nonlinear behavior of the doped silicon substrate in presence of the electric potential difference due to the transient voltage between the TSVs. The impact of time-variant capacitance between the via and the substrate on crosstalk and signal propagation is analyzed.

Original languageEnglish (US)
Article number7073622
Pages (from-to)1216-1225
Number of pages10
JournalIEEE Transactions on Electromagnetic Compatibility
Volume57
Issue number5
DOIs
StatePublished - Oct 1 2015

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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