Transient Analysis of TSV Equivalent Circuit Considering Nonlinear MOS Capacitance Effects

Stefano Piersanti; Francesco De Paulis; Antonio Orlandi; Madhavan Swaminathan; Vittorio Ricchiuti

doi:10.1109/TEMC.2015.2414477

Transient Analysis of TSV Equivalent Circuit Considering Nonlinear MOS Capacitance Effects

Stefano Piersanti, Francesco De Paulis, Antonio Orlandi, Madhavan Swaminathan, Vittorio Ricchiuti

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

An equivalent circuit model for the transient analysis of through-silicon vias (TSV) taking into account nonlinear metal-oxide-semiconductor effects is proposed. The model takes into account the nonlinear behavior of the doped silicon substrate in presence of the electric potential difference due to the transient voltage between the TSVs. The impact of time-variant capacitance between the via and the substrate on crosstalk and signal propagation is analyzed.

Original language	English (US)
Article number	7073622
Pages (from-to)	1216-1225
Number of pages	10
Journal	IEEE Transactions on Electromagnetic Compatibility
Volume	57
Issue number	5
DOIs	https://doi.org/10.1109/TEMC.2015.2414477
State	Published - Oct 1 2015

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "An equivalent circuit model for the transient analysis of through-silicon vias (TSV) taking into account nonlinear metal-oxide-semiconductor effects is proposed. The model takes into account the nonlinear behavior of the doped silicon substrate in presence of the electric potential difference due to the transient voltage between the TSVs. The impact of time-variant capacitance between the via and the substrate on crosstalk and signal propagation is analyzed.",

author = "Stefano Piersanti and {De Paulis}, Francesco and Antonio Orlandi and Madhavan Swaminathan and Vittorio Ricchiuti",

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AU - Piersanti, Stefano

AU - De Paulis, Francesco

AU - Orlandi, Antonio

AU - Swaminathan, Madhavan

AU - Ricchiuti, Vittorio

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AB - An equivalent circuit model for the transient analysis of through-silicon vias (TSV) taking into account nonlinear metal-oxide-semiconductor effects is proposed. The model takes into account the nonlinear behavior of the doped silicon substrate in presence of the electric potential difference due to the transient voltage between the TSVs. The impact of time-variant capacitance between the via and the substrate on crosstalk and signal propagation is analyzed.

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Transient Analysis of TSV Equivalent Circuit Considering Nonlinear MOS Capacitance Effects

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