Transition metal dichalcogenide schottky barrier transistors: A device analysis and material comparison

Joerg Appenzeller, Feng Zhang, Saptarshi Das, Joachim Knoch

Research output: Chapter in Book/Report/Conference proceedingChapter

26 Scopus citations
Original languageEnglish (US)
Title of host publication2D Materials for Nanoelectronics
PublisherCRC Press
Pages207-240
Number of pages34
ISBN (Electronic)9781498704182
ISBN (Print)9781498704175
StatePublished - May 5 2016

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy
  • General Engineering
  • General Materials Science

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