Transition metal dichalcogenide schottky barrier transistors: A device analysis and material comparison

Joerg Appenzeller, Feng Zhang, Saptarshi Das, Joachim Knoch

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Original language	English (US)
Title of host publication	2D Materials for Nanoelectronics
Publisher	CRC Press
Pages	207-240
Number of pages	34
ISBN (Electronic)	9781498704182
ISBN (Print)	9781498704175
State	Published - May 5 2016

All Science Journal Classification (ASJC) codes

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title = "Transition metal dichalcogenide schottky barrier transistors: A device analysis and material comparison",

author = "Joerg Appenzeller and Feng Zhang and Saptarshi Das and Joachim Knoch",

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