Transparent p-type CuI film based self-powered ultraviolet photodetectors with ultrahigh speed, responsivity and detectivity

Yi Huang, Jin Tan, Gang Gao, Jianmei Xu, Ling Zhao, Wei Zhou, Qing Wang, Shuoguo Yuan, Jian Sun

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Currently, ultraviolet photodetectors attract extensive attention from people all over the world due to their applications in solar ultraviolet radiation detection, flame detection, ozone monitoring, missile tracking, and environmental monitoring. A heterojunction is an essential aspect for fulfilling the demand for high-performance self-powered ultraviolet photodetectors. However, it is still very challenging to achieve both good electrical property and transparency for p-type semiconductors and conductors especially at low preparation temperature. This work reports the fabrication of ultrathin, ultra-high-transparency and very smooth CuI films at room temperature by the copper film iodination method, whose figure of merit (FoM) far exceeds those of most of the typical p-type oxides. The obtained p-type CuI films (p-CuI) were fabricated on an n-type Si (n-Si) substrate to construct a heterojunction photodetector. The p-CuI/n-Si photodetector has excellent optoelectronic properties in self-powered mode, including a large responsivity and detectivity (123.3 mA W−1, 5.7 × 1012 Jones), and a fast response speed (rise/decay time of 90 μs/140 μs), which are overall better than those of all types of CuI-based self-powered photodetectors. In addition, the CuI film deposited on the flexible substrate was applied in a CuI photodetector with a metal-semiconductor-metal structure, exhibiting good optoelectronic properties and bending stability, which shows promising applications in transparent, flexible, wearable electronic and optoelectronic devices.

Original languageEnglish (US)
Pages (from-to)13040-13046
Number of pages7
JournalJournal of Materials Chemistry C
Issue number36
StatePublished - Aug 17 2022

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Materials Chemistry

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