Transport coefficients of AlGaN/GaN heterostructures

M. Ahoujja; W. C. Mitchel; S. Elhamri; R. S. Newrock; D. B. Mast; J. M. Redwing; M. A. Tischler; J. S. Flynn

doi:10.1007/s11664-998-0389-4

Transport coefficients of AlGaN/GaN heterostructures

M. Ahoujja, W. C. Mitchel, S. Elhamri, R. S. Newrock, D. B. Mast, J. M. Redwing, M. A. Tischler, J. S. Flynn

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have experimentally determined the effective mass (m*) of GaN, the classical (τ_c), and quantum (τ_q) scattering times for a two-dimensional electron gas residing at the interface of an AlGaN/GaN heterostructure, using the Shubnikovde Haas effect. The ratio of the two scattering times, τ_c/τ_q, suggests that, at low temperatures, the scattering mechanism limiting the mobility is due to remote ionized impurities located in AlGaN. This study should provide sample growers with information useful for improving the quality of the nitride heterostuctures.

Original language	English (US)
Pages (from-to)	210-214
Number of pages	5
Journal	Journal of Electronic Materials
Volume	27
Issue number	4
DOIs	https://doi.org/10.1007/s11664-998-0389-4
State	Published - Apr 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-998-0389-4

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title = "Transport coefficients of AlGaN/GaN heterostructures",

abstract = "We have experimentally determined the effective mass (m*) of GaN, the classical (τc), and quantum (τq) scattering times for a two-dimensional electron gas residing at the interface of an AlGaN/GaN heterostructure, using the Shubnikovde Haas effect. The ratio of the two scattering times, τc/τq, suggests that, at low temperatures, the scattering mechanism limiting the mobility is due to remote ionized impurities located in AlGaN. This study should provide sample growers with information useful for improving the quality of the nitride heterostuctures.",

author = "M. Ahoujja and Mitchel, {W. C.} and S. Elhamri and Newrock, {R. S.} and Mast, {D. B.} and Redwing, {J. M.} and Tischler, {M. A.} and Flynn, {J. S.}",

note = "Funding Information: The authors gratefully acknowledge useful discussions with Dr. Howard Jackson. The work of WCM was supported in part by the U.S. Air Force Office of Scientific Research. M. Ahoujja performed this work while holding a National Research Council research associateship. The work of the Cincinnati group is supported by a U.S. Air Force grant through Laurence Associates, Inc. OLA #96-5000-5529.",

year = "1998",

month = apr,

doi = "10.1007/s11664-998-0389-4",

language = "English (US)",

volume = "27",

pages = "210--214",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

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TY - JOUR

T1 - Transport coefficients of AlGaN/GaN heterostructures

AU - Ahoujja, M.

AU - Mitchel, W. C.

AU - Elhamri, S.

AU - Newrock, R. S.

AU - Mast, D. B.

AU - Redwing, J. M.

AU - Tischler, M. A.

AU - Flynn, J. S.

N1 - Funding Information: The authors gratefully acknowledge useful discussions with Dr. Howard Jackson. The work of WCM was supported in part by the U.S. Air Force Office of Scientific Research. M. Ahoujja performed this work while holding a National Research Council research associateship. The work of the Cincinnati group is supported by a U.S. Air Force grant through Laurence Associates, Inc. OLA #96-5000-5529.

PY - 1998/4

Y1 - 1998/4

N2 - We have experimentally determined the effective mass (m*) of GaN, the classical (τc), and quantum (τq) scattering times for a two-dimensional electron gas residing at the interface of an AlGaN/GaN heterostructure, using the Shubnikovde Haas effect. The ratio of the two scattering times, τc/τq, suggests that, at low temperatures, the scattering mechanism limiting the mobility is due to remote ionized impurities located in AlGaN. This study should provide sample growers with information useful for improving the quality of the nitride heterostuctures.

AB - We have experimentally determined the effective mass (m*) of GaN, the classical (τc), and quantum (τq) scattering times for a two-dimensional electron gas residing at the interface of an AlGaN/GaN heterostructure, using the Shubnikovde Haas effect. The ratio of the two scattering times, τc/τq, suggests that, at low temperatures, the scattering mechanism limiting the mobility is due to remote ionized impurities located in AlGaN. This study should provide sample growers with information useful for improving the quality of the nitride heterostuctures.

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U2 - 10.1007/s11664-998-0389-4

DO - 10.1007/s11664-998-0389-4

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SN - 0361-5235

VL - 27

SP - 210

EP - 214

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 4

ER -

Transport coefficients of AlGaN/GaN heterostructures

Abstract

All Science Journal Classification (ASJC) codes

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