Transverse piezoelectric properties of epitaxial Pb(Yb1/2Nb1/2)O3-PbTiO3 (50/50) films

Takeshi Yoshimura; Susan Trolier-McKinstry

doi:10.1016/S0022-0248(01)01200-3

Transverse piezoelectric properties of epitaxial Pb(Yb_1/2Nb_1/2)O₃-PbTiO₃ (50/50) films

Takeshi Yoshimura
, Susan Trolier-McKinstry

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The transverse piezoelectric properties of (1-x)Pb(Yb_1/2Nb_1/2)O_3-xPbTiO₃ (PYbN-PT, x = 0.5) epitaxial films grown on (00 1)SrRuO₃/(00 1)LaAlO₃ (indices given for the pseudocubic unit cell) were investigated by the wafer flexure technique. PYbN-PT films and SrRuO₃ bottom electrodes were deposited by pulsed laser deposition. At a deposition pressure of 400 mTorr, (001) PYbN-PT epitaxial films with high phase purity and good crystalline quality were obtained for a wide range of deposition rates (40-100nm/min) and temperatures (620-660°C). The remanent polarization of the film was as high as 30 μC/cm². The e₃₁ coefficient and the aging rate were strongly dependent on the poling direction. The maximum e₃₁ coefficient was -11.0C/m². The minimum aging rate of the piezoelectric coefficients for the films was 2% per decade.

Original language	English (US)
Pages (from-to)	445-449
Number of pages	5
Journal	Journal of Crystal Growth
Volume	229
Issue number	1
DOIs	https://doi.org/10.1016/S0022-0248(01)01200-3
State	Published - Jul 2 2001

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(01)01200-3

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@article{04008cac12f64648aff57c0b4ff717c0,

title = "Transverse piezoelectric properties of epitaxial Pb(Yb1/2Nb1/2)O3-PbTiO3 (50/50) films",

abstract = "The transverse piezoelectric properties of (1-x)Pb(Yb1/2Nb1/2)O3-xPbTiO3 (PYbN-PT, x = 0.5) epitaxial films grown on (00 1)SrRuO3/(00 1)LaAlO3 (indices given for the pseudocubic unit cell) were investigated by the wafer flexure technique. PYbN-PT films and SrRuO3 bottom electrodes were deposited by pulsed laser deposition. At a deposition pressure of 400 mTorr, (001) PYbN-PT epitaxial films with high phase purity and good crystalline quality were obtained for a wide range of deposition rates (40-100nm/min) and temperatures (620-660°C). The remanent polarization of the film was as high as 30 μC/cm2. The e31 coefficient and the aging rate were strongly dependent on the poling direction. The maximum e31 coefficient was -11.0C/m2. The minimum aging rate of the piezoelectric coefficients for the films was 2\% per decade.",

author = "Takeshi Yoshimura and Susan Trolier-McKinstry",

note = "Funding Information: The authors are grateful to B. Jones and M. Angelone for their cooperation in the ceramic target synthesis and texture analyses, respectively. Support for this work was provided by the Office of Naval Research (US) under the Contract No. N00014-98-1-0527. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

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doi = "10.1016/S0022-0248(01)01200-3",

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AU - Yoshimura, Takeshi

AU - Trolier-McKinstry, Susan

N1 - Funding Information: The authors are grateful to B. Jones and M. Angelone for their cooperation in the ceramic target synthesis and texture analyses, respectively. Support for this work was provided by the Office of Naval Research (US) under the Contract No. N00014-98-1-0527. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2001/7/2

Y1 - 2001/7/2

N2 - The transverse piezoelectric properties of (1-x)Pb(Yb1/2Nb1/2)O3-xPbTiO3 (PYbN-PT, x = 0.5) epitaxial films grown on (00 1)SrRuO3/(00 1)LaAlO3 (indices given for the pseudocubic unit cell) were investigated by the wafer flexure technique. PYbN-PT films and SrRuO3 bottom electrodes were deposited by pulsed laser deposition. At a deposition pressure of 400 mTorr, (001) PYbN-PT epitaxial films with high phase purity and good crystalline quality were obtained for a wide range of deposition rates (40-100nm/min) and temperatures (620-660°C). The remanent polarization of the film was as high as 30 μC/cm2. The e31 coefficient and the aging rate were strongly dependent on the poling direction. The maximum e31 coefficient was -11.0C/m2. The minimum aging rate of the piezoelectric coefficients for the films was 2% per decade.

AB - The transverse piezoelectric properties of (1-x)Pb(Yb1/2Nb1/2)O3-xPbTiO3 (PYbN-PT, x = 0.5) epitaxial films grown on (00 1)SrRuO3/(00 1)LaAlO3 (indices given for the pseudocubic unit cell) were investigated by the wafer flexure technique. PYbN-PT films and SrRuO3 bottom electrodes were deposited by pulsed laser deposition. At a deposition pressure of 400 mTorr, (001) PYbN-PT epitaxial films with high phase purity and good crystalline quality were obtained for a wide range of deposition rates (40-100nm/min) and temperatures (620-660°C). The remanent polarization of the film was as high as 30 μC/cm2. The e31 coefficient and the aging rate were strongly dependent on the poling direction. The maximum e31 coefficient was -11.0C/m2. The minimum aging rate of the piezoelectric coefficients for the films was 2% per decade.

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M3 - Article

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JO - Journal of Crystal Growth

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IS - 1

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Transverse piezoelectric properties of epitaxial Pb(Yb_1/2Nb_1/2)O₃-PbTiO₃ (50/50) films

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