Trap-assisted conduction in Pt-gated Gd2O3/Si capacitors

E. Lipp; Z. Shahar; B. C. Bittel; P. M. Lenahan; D. Schwendt; H. J. Osten; M. Eizenberg

doi:10.1063/1.3573036

Trap-assisted conduction in Pt-gated Gd₂O₃/Si capacitors

E. Lipp
, Z. Shahar
, B. C. Bittel
, P. M. Lenahan
, D. Schwendt
, H. J. Osten
, M. Eizenberg

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The barrier height at the Pt/Gd₂O₃ interface is determined by current-voltage measurements. Current conduction is found to be governed by carrier injection from the electrode, with a barrier height of 0.6 0.1 eV. This value, which was verified by the method suggested by Zafar [Appl. Phys. Lett. 80, 4858 (2002)], is much smaller than the difference between the metal work function (5.6 eV) and the oxide electron affinity (1.95-2.05 eV). As Fermi-level pinning is not dominant at Pt/Gd₂O₃ interfaces, it is proposed that electrons are injected into a defect-related energy band in the oxide. The existence of such a defect, as well as its position in the oxide forbidden energy bandgap, agrees with results obtained by magnetic resonance measurements.

Original language	English (US)
Article number	073724
Journal	Journal of Applied Physics
Volume	109
Issue number	7
DOIs	https://doi.org/10.1063/1.3573036
State	Published - Apr 1 2011

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.3573036

Cite this

@article{91bd047a39c848c882723e2daad7eed9,

title = "Trap-assisted conduction in Pt-gated Gd2O3/Si capacitors",

abstract = "The barrier height at the Pt/Gd2O3 interface is determined by current-voltage measurements. Current conduction is found to be governed by carrier injection from the electrode, with a barrier height of 0.6 0.1 eV. This value, which was verified by the method suggested by Zafar [Appl. Phys. Lett. 80, 4858 (2002)], is much smaller than the difference between the metal work function (5.6 eV) and the oxide electron affinity (1.95-2.05 eV). As Fermi-level pinning is not dominant at Pt/Gd2O3 interfaces, it is proposed that electrons are injected into a defect-related energy band in the oxide. The existence of such a defect, as well as its position in the oxide forbidden energy bandgap, agrees with results obtained by magnetic resonance measurements.",

author = "E. Lipp and Z. Shahar and Bittel, \{B. C.\} and Lenahan, \{P. M.\} and D. Schwendt and Osten, \{H. J.\} and M. Eizenberg",

note = "Funding Information: This work was supported by a grant from the German-Israel Foundation for Scientific Research and Development and by the Russell Berrie Nanotechnology Institute at the Technion. One of the authors (E.L.) acknowledges the support of an Israel Ministry of Science Eshkol grant. Dr. Ramadurai Ranjith (Leibniz University) is acknowledged for helpful discussions and input.",

year = "2011",

month = apr,

day = "1",

doi = "10.1063/1.3573036",

language = "English (US)",

volume = "109",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Trap-assisted conduction in Pt-gated Gd2O3/Si capacitors

AU - Lipp, E.

AU - Shahar, Z.

AU - Bittel, B. C.

AU - Lenahan, P. M.

AU - Schwendt, D.

AU - Osten, H. J.

AU - Eizenberg, M.

N1 - Funding Information: This work was supported by a grant from the German-Israel Foundation for Scientific Research and Development and by the Russell Berrie Nanotechnology Institute at the Technion. One of the authors (E.L.) acknowledges the support of an Israel Ministry of Science Eshkol grant. Dr. Ramadurai Ranjith (Leibniz University) is acknowledged for helpful discussions and input.

PY - 2011/4/1

Y1 - 2011/4/1

N2 - The barrier height at the Pt/Gd2O3 interface is determined by current-voltage measurements. Current conduction is found to be governed by carrier injection from the electrode, with a barrier height of 0.6 0.1 eV. This value, which was verified by the method suggested by Zafar [Appl. Phys. Lett. 80, 4858 (2002)], is much smaller than the difference between the metal work function (5.6 eV) and the oxide electron affinity (1.95-2.05 eV). As Fermi-level pinning is not dominant at Pt/Gd2O3 interfaces, it is proposed that electrons are injected into a defect-related energy band in the oxide. The existence of such a defect, as well as its position in the oxide forbidden energy bandgap, agrees with results obtained by magnetic resonance measurements.

AB - The barrier height at the Pt/Gd2O3 interface is determined by current-voltage measurements. Current conduction is found to be governed by carrier injection from the electrode, with a barrier height of 0.6 0.1 eV. This value, which was verified by the method suggested by Zafar [Appl. Phys. Lett. 80, 4858 (2002)], is much smaller than the difference between the metal work function (5.6 eV) and the oxide electron affinity (1.95-2.05 eV). As Fermi-level pinning is not dominant at Pt/Gd2O3 interfaces, it is proposed that electrons are injected into a defect-related energy band in the oxide. The existence of such a defect, as well as its position in the oxide forbidden energy bandgap, agrees with results obtained by magnetic resonance measurements.

UR - https://www.scopus.com/pages/publications/79955394552

UR - https://www.scopus.com/pages/publications/79955394552#tab=citedBy

U2 - 10.1063/1.3573036

DO - 10.1063/1.3573036

M3 - Article

AN - SCOPUS:79955394552

SN - 0021-8979

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 073724

ER -

Trap-assisted conduction in Pt-gated Gd₂O₃/Si capacitors

Abstract

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