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Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor

  • E. J. Miller
  • , X. Z. Dang
  • , H. H. Wieder
  • , P. M. Asbeck
  • , E. T. Yu
  • , G. J. Sullivan
  • , J. M. Redwing

Research output: Contribution to journal › Article › peer-review

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