Tri-layer a-Si: H integrated circuits on polymeric substrates

Using a thermal mountant, we have fabricated hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) and integrated circuits on both colored and nearly colorless polyimide substrates with performance very similar to devices fabricated on glass substrates. Delay and power dissipation were measured with ring oscillators; minimum stage delay was less than 10 μsec, and minimum power dissipation was less than 10 μW per stage. These results indicate that with suitable thermal engineering, a-Si:H devices and circuits can be fabricated on polymeric substrates using nearly standard processing.