Tri-layer a-Si: H TFTs on polymeric substrates

D. B. Thomasson, M. Bonse, R. J. Koval, J. R. Huang, C. R. Wronski, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations


Using a mountain technique, hydrogenated amorphous silicon thin film transistors (a-Si:H) were fabricated on both colored and nearly colorless polyimide substrates with performance nearly identical to devices fabricated on glass substrates. These results indicate that with suitable thermal engineering, a-Si:H devices and circuits can be fabricated on polymeric substrates using nearly standard processing.

Original languageEnglish (US)
Title of host publicationAnnual Device Research Conference Digest
Number of pages2
StatePublished - 1998
EventProceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA
Duration: Jun 22 1998Jun 24 1998


OtherProceedings of the 1998 56th Annual Device Research Conference
CityCharlottesville, VA, USA

All Science Journal Classification (ASJC) codes

  • General Engineering


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