Tri-layer a-Si: H TFTs on polymeric substrates

D. B. Thomasson; M. Bonse; R. J. Koval; J. R. Huang; C. R. Wronski; Thomas Nelson Jackson

Tri-layer a-Si: H TFTs on polymeric substrates

D. B. Thomasson, M. Bonse, R. J. Koval, J. R. Huang, C. R. Wronski, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Using a mountain technique, hydrogenated amorphous silicon thin film transistors (a-Si:H) were fabricated on both colored and nearly colorless polyimide substrates with performance nearly identical to devices fabricated on glass substrates. These results indicate that with suitable thermal engineering, a-Si:H devices and circuits can be fabricated on polymeric substrates using nearly standard processing.

Original language	English (US)
Title of host publication	Annual Device Research Conference Digest
Publisher	IEEE
Pages	126-127
Number of pages	2
State	Published - 1998
Event	Proceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA Duration: Jun 22 1998 → Jun 24 1998

Other

Other	Proceedings of the 1998 56th Annual Device Research Conference
City	Charlottesville, VA, USA
Period	6/22/98 → 6/24/98

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@inproceedings{78c71e465bfd4b9dbc1c0d19c7cc48bc,

title = "Tri-layer a-Si: H TFTs on polymeric substrates",

abstract = "Using a mountain technique, hydrogenated amorphous silicon thin film transistors (a-Si:H) were fabricated on both colored and nearly colorless polyimide substrates with performance nearly identical to devices fabricated on glass substrates. These results indicate that with suitable thermal engineering, a-Si:H devices and circuits can be fabricated on polymeric substrates using nearly standard processing.",

author = "Thomasson, {D. B.} and M. Bonse and Koval, {R. J.} and Huang, {J. R.} and Wronski, {C. R.} and Jackson, {Thomas Nelson}",

year = "1998",

language = "English (US)",

pages = "126--127",

booktitle = "Annual Device Research Conference Digest",

publisher = "IEEE",

note = "Proceedings of the 1998 56th Annual Device Research Conference ; Conference date: 22-06-1998 Through 24-06-1998",

}

TY - GEN

T1 - Tri-layer a-Si

T2 - Proceedings of the 1998 56th Annual Device Research Conference

AU - Thomasson, D. B.

AU - Bonse, M.

AU - Koval, R. J.

AU - Huang, J. R.

AU - Wronski, C. R.

AU - Jackson, Thomas Nelson

PY - 1998

Y1 - 1998

N2 - Using a mountain technique, hydrogenated amorphous silicon thin film transistors (a-Si:H) were fabricated on both colored and nearly colorless polyimide substrates with performance nearly identical to devices fabricated on glass substrates. These results indicate that with suitable thermal engineering, a-Si:H devices and circuits can be fabricated on polymeric substrates using nearly standard processing.

AB - Using a mountain technique, hydrogenated amorphous silicon thin film transistors (a-Si:H) were fabricated on both colored and nearly colorless polyimide substrates with performance nearly identical to devices fabricated on glass substrates. These results indicate that with suitable thermal engineering, a-Si:H devices and circuits can be fabricated on polymeric substrates using nearly standard processing.

UR - http://www.scopus.com/inward/record.url?scp=0032312253&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032312253&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032312253

SP - 126

EP - 127

BT - Annual Device Research Conference Digest

PB - IEEE

Y2 - 22 June 1998 through 24 June 1998

ER -

Tri-layer a-Si: H TFTs on polymeric substrates

Abstract

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All Science Journal Classification (ASJC) codes

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