Trilayer ZnO thin-film transistors with in situ Al2O3 passivation

Yuanyuan V. Li; Kaige G. Sun; Jose Israel Ramirez; Thomas N. Jackson

doi:10.1109/LED.2013.2283337

Trilayer ZnO thin-film transistors with in situ Al₂O₃ passivation

Yuanyuan V. Li, Kaige G. Sun, Jose Israel Ramirez, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In this letter, we report trilayer ZnO thin-film transistors (TFTs) with in situ Al₂O₃ passivation fabricated using plasma-enhanced atomic layer deposition. The bottom-gate, top-contact TFTs use an Al ₂O₃ZnO-Al₂O₃ trilayer deposited in one deposition run at 200 °C that provides protection for the active layer back surface with no extra passivation step. Compared with Al₂O ₃ passivated, nontrilayer ZnO TFTs, these trilayer devices have similar field effect mobility, but more positive turn-on voltage and improved bias stability. Seven-stage trilayer ZnO TFT ring oscillators operated at 3.5 MHz at a supply voltage of 17 V, corresponding to a propagation delay of 27~ns\stage.

Original language	English (US)
Article number	6627969
Pages (from-to)	1400-1402
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	11
DOIs	https://doi.org/10.1109/LED.2013.2283337
State	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2013.2283337

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title = "Trilayer ZnO thin-film transistors with in situ Al2O3 passivation",

abstract = "In this letter, we report trilayer ZnO thin-film transistors (TFTs) with in situ Al2O3 passivation fabricated using plasma-enhanced atomic layer deposition. The bottom-gate, top-contact TFTs use an Al 2O3ZnO-Al2O3 trilayer deposited in one deposition run at 200 °C that provides protection for the active layer back surface with no extra passivation step. Compared with Al2O 3 passivated, nontrilayer ZnO TFTs, these trilayer devices have similar field effect mobility, but more positive turn-on voltage and improved bias stability. Seven-stage trilayer ZnO TFT ring oscillators operated at 3.5 MHz at a supply voltage of 17 V, corresponding to a propagation delay of 27~ns\stage.",

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AU - Li, Yuanyuan V.

AU - Sun, Kaige G.

AU - Ramirez, Jose Israel

AU - Jackson, Thomas N.

PY - 2013

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N2 - In this letter, we report trilayer ZnO thin-film transistors (TFTs) with in situ Al2O3 passivation fabricated using plasma-enhanced atomic layer deposition. The bottom-gate, top-contact TFTs use an Al 2O3ZnO-Al2O3 trilayer deposited in one deposition run at 200 °C that provides protection for the active layer back surface with no extra passivation step. Compared with Al2O 3 passivated, nontrilayer ZnO TFTs, these trilayer devices have similar field effect mobility, but more positive turn-on voltage and improved bias stability. Seven-stage trilayer ZnO TFT ring oscillators operated at 3.5 MHz at a supply voltage of 17 V, corresponding to a propagation delay of 27~ns\stage.

AB - In this letter, we report trilayer ZnO thin-film transistors (TFTs) with in situ Al2O3 passivation fabricated using plasma-enhanced atomic layer deposition. The bottom-gate, top-contact TFTs use an Al 2O3ZnO-Al2O3 trilayer deposited in one deposition run at 200 °C that provides protection for the active layer back surface with no extra passivation step. Compared with Al2O 3 passivated, nontrilayer ZnO TFTs, these trilayer devices have similar field effect mobility, but more positive turn-on voltage and improved bias stability. Seven-stage trilayer ZnO TFT ring oscillators operated at 3.5 MHz at a supply voltage of 17 V, corresponding to a propagation delay of 27~ns\stage.

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Trilayer ZnO thin-film transistors with in situ Al₂O₃ passivation

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