Tunable anomalous Hall effect in a nonferromagnetic system

John Cumings, L. S. Moore, H. T. Chou, K. C. Ku, G. Xiang, S. A. Crooker, N. Samarth, D. Goldhaber-Gordon

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


We measure the low-field Hall resistivity of a magnetically doped two-dimensional electron gas as a function of temperature and electrically gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de Haas oscillations reveals an excess Hall resistivity that increases with decreasing temperature. This excess Hall resistivity qualitatively tracks the paramagnetic polarization of the sample, in analogy to the ferromagnetic anomalous Hall effect. The data are consistent with skew scattering of carriers by disorder near the crossover to localization.

Original languageEnglish (US)
Article number196404
JournalPhysical review letters
Issue number19
StatePublished - 2006

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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