Tunable barium strontium titanate thin film capacitors for RF and microwave applications

Ali Tombak; Jon Paul Maria; Francisco Ayguavives; Zhang Jin; Gregory T. Stauf; Angus I. Kingon; Amir Mortazawi

doi:10.1109/7260.975716

Tunable barium strontium titanate thin film capacitors for RF and microwave applications

Ali Tombak
, Jon Paul Maria
, Francisco Ayguavives
, Zhang Jin
, Gregory T. Stauf
, Angus I. Kingon
, Amir Mortazawi

Research output: Contribution to journal › Article › peer-review

170 Scopus citations

Abstract

The measurement results for thin film barium strontium titanate (BST) based voltage tunable capacitors intended for RF applications are reported. At 9 V dc, BST capacitors fabricated using MOCVD (metalorganic chemical vapor deposition) method achieved 71% (3.4:1) tunability. The measured device quality factor (Q) for BST varactors is comparable with the device Q for commercially available varactor diodes of similar capacitance. The typical dielectric loss tangent was in the range 0.003-0.009 at VHF. Large signal measurement and modeling results for BST thin film capacitors are also presented.

Original language	English (US)
Pages (from-to)	3-5
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	12
Issue number	1
DOIs	https://doi.org/10.1109/7260.975716
State	Published - Jan 2002

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/7260.975716

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title = "Tunable barium strontium titanate thin film capacitors for RF and microwave applications",

abstract = "The measurement results for thin film barium strontium titanate (BST) based voltage tunable capacitors intended for RF applications are reported. At 9 V dc, BST capacitors fabricated using MOCVD (metalorganic chemical vapor deposition) method achieved 71\% (3.4:1) tunability. The measured device quality factor (Q) for BST varactors is comparable with the device Q for commercially available varactor diodes of similar capacitance. The typical dielectric loss tangent was in the range 0.003-0.009 at VHF. Large signal measurement and modeling results for BST thin film capacitors are also presented.",

author = "Ali Tombak and Maria, \{Jon Paul\} and Francisco Ayguavives and Zhang Jin and Stauf, \{Gregory T.\} and Kingon, \{Angus I.\} and Amir Mortazawi",

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AU - Tombak, Ali

AU - Maria, Jon Paul

AU - Ayguavives, Francisco

AU - Jin, Zhang

AU - Stauf, Gregory T.

AU - Kingon, Angus I.

AU - Mortazawi, Amir

PY - 2002/1

Y1 - 2002/1

N2 - The measurement results for thin film barium strontium titanate (BST) based voltage tunable capacitors intended for RF applications are reported. At 9 V dc, BST capacitors fabricated using MOCVD (metalorganic chemical vapor deposition) method achieved 71% (3.4:1) tunability. The measured device quality factor (Q) for BST varactors is comparable with the device Q for commercially available varactor diodes of similar capacitance. The typical dielectric loss tangent was in the range 0.003-0.009 at VHF. Large signal measurement and modeling results for BST thin film capacitors are also presented.

AB - The measurement results for thin film barium strontium titanate (BST) based voltage tunable capacitors intended for RF applications are reported. At 9 V dc, BST capacitors fabricated using MOCVD (metalorganic chemical vapor deposition) method achieved 71% (3.4:1) tunability. The measured device quality factor (Q) for BST varactors is comparable with the device Q for commercially available varactor diodes of similar capacitance. The typical dielectric loss tangent was in the range 0.003-0.009 at VHF. Large signal measurement and modeling results for BST thin film capacitors are also presented.

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IS - 1

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Tunable barium strontium titanate thin film capacitors for RF and microwave applications

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