Abstract
Ferroelectric relaxor thin films Pb(Mg1/3Nb2/3Ti0.1)O3 (90PMN10PT) have been fabricated by the sol-gel technique. The dielectric, piezoelectric and electrostrictive characteristics have been investigated. Experimental results show that the dielectric permittivity and effective piezoelectric coefficients of the films can be tuned by varying dc bias fields which offers the useful features in designing smart micro transducer and actuator systems. Dielectric constants of the films are in the range of 5000 to 6000. The electric field strain is on the order of 10-3, and the maximum effective d33 coefficient of 90PMN10PT films is as large ad 265 pC/N at 31 kV/cm. The electrostrictive coefficients Q11 is on the order of 1.2 × 10-2 m4/C2 and M11 is 3.5 × 10-16m2/V2.
Original language | English (US) |
---|---|
Pages (from-to) | 47-52 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 310 |
DOIs | |
State | Published - 1993 |
Event | Proceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: Apr 16 1993 → Apr 20 1993 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering