Tunable electronic structure in dilute magnetic semiconductor Sr₃SnO/c-YSZ/Si (001) epitaxial heterostructures

Keyphrases

• Si(111) 100%
• Dilute Magnetic Semiconductor 100%
• Oxygen Vacancy Concentration 100%
• Epitaxial Heterostructures 100%
• Oxygen Vacancy 66%
• Work Function 66%
• Resistivity 33%
• Post-growth 33%
• Linear Relationship 33%
• Structural Properties 33%
• Physical Properties 33%
• Transport Properties 33%
• Epitaxial 33%
• Chemical Properties 33%
• Low Resistivity 33%
• Energy Gap 33%
• Opposite Effects 33%
• Property Change 33%
• Epitaxial Thin Film 33%
• Spintronic Devices 33%
• Annealing Treatment 33%
• Vacuum Annealing 33%
• Ultraviolet Photoelectron Spectroscopy 33%
• Post-growth Annealing 33%
• Variable Range Hopping 33%
• Hopping Energy 33%
• Hop Distance 33%
• Surface Electronic Structure 33%

Material Science

• Heterojunction 100%
• Oxygen Vacancy 100%
• Dilute Magnetic Semiconductor 100%
• Thin Films 60%
• Electrical Resistivity 40%
• Annealing 40%
• Film 20%
• Physical Property 20%
• Chemical Property 20%
• Ultra Violet Photoemission Spectroscopy 20%