TY - JOUR
T1 - Tuning the intrinsic spin Hall effect by charge density wave order in topological kagome metals
AU - Golovanova, Diana
AU - Tan, Hengxin
AU - Holder, Tobias
AU - Yan, Binghai
N1 - Publisher Copyright:
© 2023 American Physical Society.
PY - 2023/11/15
Y1 - 2023/11/15
N2 - Kagome metals are topological materials with a rich phase diagram featuring various charge density wave orders and even unconventional superconductivity. However, little is still known about possible spin polarized responses in these nonmagnetic compounds. Here, we perform ab initio calculations of the intrinsic spin Hall effect (SHE) in the kagome metals AV3Sb5 (A=Cs, Rb, K), CsTi3Bi5, and ScV6Sn6. We report large spin Hall conductivities, comparable with the Weyl semimetal TaAs. Additionally, in CsV3Sb5 the SHE is strongly renormalized by the charge density wave order. We can understand these results based on the topological properties of band structures, demonstrating that the SHE is dominated by the position and shape of the Dirac nodal lines in the kagome sublattice. Our results suggest kagome materials as a promising, tunable platform for future spintronics applications.
AB - Kagome metals are topological materials with a rich phase diagram featuring various charge density wave orders and even unconventional superconductivity. However, little is still known about possible spin polarized responses in these nonmagnetic compounds. Here, we perform ab initio calculations of the intrinsic spin Hall effect (SHE) in the kagome metals AV3Sb5 (A=Cs, Rb, K), CsTi3Bi5, and ScV6Sn6. We report large spin Hall conductivities, comparable with the Weyl semimetal TaAs. Additionally, in CsV3Sb5 the SHE is strongly renormalized by the charge density wave order. We can understand these results based on the topological properties of band structures, demonstrating that the SHE is dominated by the position and shape of the Dirac nodal lines in the kagome sublattice. Our results suggest kagome materials as a promising, tunable platform for future spintronics applications.
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U2 - 10.1103/PhysRevB.108.205203
DO - 10.1103/PhysRevB.108.205203
M3 - Article
AN - SCOPUS:85179747765
SN - 2469-9950
VL - 108
JO - Physical Review B
JF - Physical Review B
IS - 20
M1 - 205203
ER -