Tuning the remanent polarization of epitaxial ferroelectric thin films with strain

J. X. Zhang; D. G. Schlom; L. Q. Chen; C. B. Eom

doi:10.1063/1.3231444

Tuning the remanent polarization of epitaxial ferroelectric thin films with strain

J. X. Zhang
, D. G. Schlom
, L. Q. Chen
, C. B. Eom

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

The effect of biaxial strain on the remanent polarization of epitaxial thin films of various ferroelectric materials is studied using phenomenological Landau-Devonshire theory. It is shown that the strain dependences of the remanent polarizations are strongly dependent on crystal symmetries and film orientations. For (001)_p-oriented ferroelectric films with (distorted) rhombohedral symmetry, strain-induced polarization rotation leads to stronger strain dependences than in ferroelectric films with tetragonal or orthorhombic symmetries. For (111)_p-oriented ferroelectric films with rhombohedral symmetry, however, the remanent polarization is less sensitive to the biaxial strain.

Original language	English (US)
Article number	122904
Journal	Applied Physics Letters
Volume	95
Issue number	12
DOIs	https://doi.org/10.1063/1.3231444
State	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3231444

Cite this

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title = "Tuning the remanent polarization of epitaxial ferroelectric thin films with strain",

abstract = "The effect of biaxial strain on the remanent polarization of epitaxial thin films of various ferroelectric materials is studied using phenomenological Landau-Devonshire theory. It is shown that the strain dependences of the remanent polarizations are strongly dependent on crystal symmetries and film orientations. For (001)p-oriented ferroelectric films with (distorted) rhombohedral symmetry, strain-induced polarization rotation leads to stronger strain dependences than in ferroelectric films with tetragonal or orthorhombic symmetries. For (111)p-oriented ferroelectric films with rhombohedral symmetry, however, the remanent polarization is less sensitive to the biaxial strain.",

author = "Zhang, \{J. X.\} and Schlom, \{D. G.\} and Chen, \{L. Q.\} and Eom, \{C. B.\}",

note = "Funding Information: The authors are grateful for the financial support from the Department of Energy under Grant No. DOE DE-FG02-07ER46417 (L.Q.C.) and from the National Science Foundation under Grant Nos. DMR-0820404 (D.G.S.) and ECCS-0708759 (C.B.E.).",

year = "2009",

doi = "10.1063/1.3231444",

language = "English (US)",

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journal = "Applied Physics Letters",

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AU - Zhang, J. X.

AU - Schlom, D. G.

AU - Chen, L. Q.

AU - Eom, C. B.

N1 - Funding Information: The authors are grateful for the financial support from the Department of Energy under Grant No. DOE DE-FG02-07ER46417 (L.Q.C.) and from the National Science Foundation under Grant Nos. DMR-0820404 (D.G.S.) and ECCS-0708759 (C.B.E.).

PY - 2009

Y1 - 2009

N2 - The effect of biaxial strain on the remanent polarization of epitaxial thin films of various ferroelectric materials is studied using phenomenological Landau-Devonshire theory. It is shown that the strain dependences of the remanent polarizations are strongly dependent on crystal symmetries and film orientations. For (001)p-oriented ferroelectric films with (distorted) rhombohedral symmetry, strain-induced polarization rotation leads to stronger strain dependences than in ferroelectric films with tetragonal or orthorhombic symmetries. For (111)p-oriented ferroelectric films with rhombohedral symmetry, however, the remanent polarization is less sensitive to the biaxial strain.

AB - The effect of biaxial strain on the remanent polarization of epitaxial thin films of various ferroelectric materials is studied using phenomenological Landau-Devonshire theory. It is shown that the strain dependences of the remanent polarizations are strongly dependent on crystal symmetries and film orientations. For (001)p-oriented ferroelectric films with (distorted) rhombohedral symmetry, strain-induced polarization rotation leads to stronger strain dependences than in ferroelectric films with tetragonal or orthorhombic symmetries. For (111)p-oriented ferroelectric films with rhombohedral symmetry, however, the remanent polarization is less sensitive to the biaxial strain.

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ER -

Tuning the remanent polarization of epitaxial ferroelectric thin films with strain

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