TY - JOUR
T1 - Tuning transport across MoS2/graphene interfaces via as-grown lateral heterostructures
AU - Subramanian, Shruti
AU - Xu, Ke
AU - Wang, Yuanxi
AU - Moser, Simon
AU - Simonson, Nicholas A.
AU - Deng, Donna
AU - Crespi, Vincent H.
AU - Fullerton-Shirey, Susan K.
AU - Robinson, Joshua A.
N1 - Funding Information:
S.S. and J.A.R. acknowledge funding from NSF CAREER (Award: 1453924). Y.W. and V.H.C. acknowledge support from the 2D Crystal Consortium National Science Foundation (NSF) Materials Innovation Platform under cooperative agreement DMR-1539916. J.A.R. and N.A.S. acknowledge the Center for Atomically Thin Multifunctional Coatings (ATOMIC), sponsored by the National Science Foundation (NSF) division of Industrial, Innovation & Partnership (IIP) (Award: 1540018). D.D., J.A.R., S.K. F.-S., and K.X. acknowledge the funds by the Center for Low Energy Systems Technology (LEAST), one of the six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA. S.K.F.-S. and K.X. acknowledge funding from NSF-DMR-EPM (Award: 1607935). S.M. acknowledges support by the Swiss National Science Foundation (Grant No. P300P2-171221). This research used resources of the Advanced Light Source, which is a DOE Office of Science User Facility under Contract No. DE-AC02-05CH11231. S.S. and J.A.R. also thank Prof. Randall M. Feenstra from Department of Physics, Carnegie Mellon University, Pittsburgh and his graduate students, Jun Li and Dacen Waters for their help and guidance with data related to this project. The authors would also like to acknowledge the staff members at the nanofabrication facility at Materials Research Institute and the Materials Characterization Laboratory at The Pennsylvania State University, whose help and guidance was key to accomplishing the goals of the project.
Publisher Copyright:
© 2020, The Author(s).
PY - 2020/12/1
Y1 - 2020/12/1
N2 - An unexploited property of graphene-based heterojunctions is the tunable doping of the junction via electrostatic gating. This unique property may be key in advancing electronic transport across interfaces with semiconductors. Here, we engineer transport in semiconducting TMDs by constructing a lateral heterostructure with epitaxial graphene and tuning its intrinsic doping to form a p–n junction between the graphene and the semiconducting TMDs. Graphene grown on SiC (epitaxial graphene) is intrinsically doped via substrate polarization without the introduction of an external dopant, thus enabling a platform for pristine heterostructures with a target band alignment. We demonstrate an electrostatically tunable graphene/MoS2p–n junction with >20× reduction and >10× increased tunability in contact resistance (Rc) compared with metal/TMD junctions, attributed to band alignment engineering and the tunable density of states in graphene. This unique concept provides improved control over transport across 2D p–n junctions.
AB - An unexploited property of graphene-based heterojunctions is the tunable doping of the junction via electrostatic gating. This unique property may be key in advancing electronic transport across interfaces with semiconductors. Here, we engineer transport in semiconducting TMDs by constructing a lateral heterostructure with epitaxial graphene and tuning its intrinsic doping to form a p–n junction between the graphene and the semiconducting TMDs. Graphene grown on SiC (epitaxial graphene) is intrinsically doped via substrate polarization without the introduction of an external dopant, thus enabling a platform for pristine heterostructures with a target band alignment. We demonstrate an electrostatically tunable graphene/MoS2p–n junction with >20× reduction and >10× increased tunability in contact resistance (Rc) compared with metal/TMD junctions, attributed to band alignment engineering and the tunable density of states in graphene. This unique concept provides improved control over transport across 2D p–n junctions.
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U2 - 10.1038/s41699-020-0144-0
DO - 10.1038/s41699-020-0144-0
M3 - Article
AN - SCOPUS:85084420346
SN - 2397-7132
VL - 4
JO - npj 2D Materials and Applications
JF - npj 2D Materials and Applications
IS - 1
M1 - 9
ER -