Tuning Transport and Chemical Sensitivity via Niobium Doping of Synthetic MoS2

Kehao Zhang, Donna D. Deng, Boyang Zheng, Yuanxi Wang, F. Keith Perkins, Natalie C. Briggs, Vincent H. Crespi, Joshua A. Robinson

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


Beyond the intrinsic properties of 2D materials, another advantage is the tunability that follows from their low dimensionality. Here, large-area Nb-doped MoS2 monolayer films deposited by metal organic chemical vapor deposition that can function as electrical contacts or chemical sensors are demonstrated. Compared to pristine MoS2, Nb-doped MoS2 exhibits a relatively faster growth rate and quenched PL due to formation of mid-gap energy bands. When the Nb concentration reaches 5 at%, doped MoS2 shows clear p-type characteristics, evident by a 1.7 eV shift of the Fermi level toward the valence band maximum. Doping also impacts transport at the metal/MoS2 interface, demonstrated by Pt–Ir metallization that is Schottky-limited when in contact with undoped MoS2 but Ohmic on Nb-MoS2. Moreover, a 50 × improved signal-to-noise ratio is demonstrated in sensing triethylamine compared to undoped MoS2, with <15 parts-per-billion detection limit.

Original languageEnglish (US)
Article number2000856
JournalAdvanced Materials Interfaces
Issue number18
StatePublished - Sep 1 2020

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering


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