TY - GEN
T1 - Tunnel fet-based ultra-low power, low-noise amplifier design for biosignal acquisition
AU - Liu, Huichu
AU - Datta, Suman
AU - Shoaran, Mahsa
AU - Schmid, Alexandre
AU - Li, Xueqing
AU - Narayanan, Vijaykrishnan
PY - 2014
Y1 - 2014
N2 - Ultra-low power circuit design techniques have enabled rapid progress in biosignal acquisition. The design of a multi-channel biosignal recording system is a challenging task, considering the low amplitude of neural signals and limited power budget for an implantable system. The front-end low-noise amplifier is a critical component with respect to overall power consumption and noise of such system. In this paper, we present a new design of III-V Heterojunction TFET (HTFET)-based neural amplifier employing a telescopic operational transconductance amplifier (OTA) for multichannel neural spike recording. Exploiting the unique device characteristics of HTFETs, our simulation shows that the proposed amplifier exhibits a midband gain of 39 dB, a gain bandwidth of 12 Hz-2.1 kHz, and an input-referred noise of 6.27 pVrms, consuming 5 nW of power at a 0.5 V supply voltage. Using the proposed HTFET amplifier, a noise efficiency factor (NEF) of 0.64 is achieved, which is significantly lower than the CMOS-based theoretical limit. Design tradeoffs related to gain, power and noise requirements are investigated, based on a comprehensive electrical noise model of HTFET and compared with the baseline Si FinFET design. Copyright
AB - Ultra-low power circuit design techniques have enabled rapid progress in biosignal acquisition. The design of a multi-channel biosignal recording system is a challenging task, considering the low amplitude of neural signals and limited power budget for an implantable system. The front-end low-noise amplifier is a critical component with respect to overall power consumption and noise of such system. In this paper, we present a new design of III-V Heterojunction TFET (HTFET)-based neural amplifier employing a telescopic operational transconductance amplifier (OTA) for multichannel neural spike recording. Exploiting the unique device characteristics of HTFETs, our simulation shows that the proposed amplifier exhibits a midband gain of 39 dB, a gain bandwidth of 12 Hz-2.1 kHz, and an input-referred noise of 6.27 pVrms, consuming 5 nW of power at a 0.5 V supply voltage. Using the proposed HTFET amplifier, a noise efficiency factor (NEF) of 0.64 is achieved, which is significantly lower than the CMOS-based theoretical limit. Design tradeoffs related to gain, power and noise requirements are investigated, based on a comprehensive electrical noise model of HTFET and compared with the baseline Si FinFET design. Copyright
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U2 - 10.1145/2627369.2627631
DO - 10.1145/2627369.2627631
M3 - Conference contribution
AN - SCOPUS:84906814892
SN - 9781450329750
T3 - Proceedings of the International Symposium on Low Power Electronics and Design
SP - 57
EP - 62
BT - ISLPED 2014 - Proceedings of the 2014 International Symposium on Low Power Electronics and Design
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 ACM/IEEE International Symposium on Low Power Electronics and Design, ISLPED 2014
Y2 - 11 August 2014 through 13 August 2014
ER -