Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs

R. Pandey; N. Agrawal; V. Chobpattana; K. Henry; M. Kuhn; H. Liu; M. Labella; C. Eichfeld; K. Wang; J. Maier; S. Stemmer; S. Mahapatra; S. Datta

doi:10.1109/IEDM.2015.7409694

Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs

R. Pandey, N. Agrawal, V. Chobpattana, K. Henry, M. Kuhn, H. Liu, M. Labella, C. Eichfeld, K. Wang, J. Maier, S. Stemmer, S. Mahapatra, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Scopus citations

Abstract

We present reliability analysis of the two most critical interfaces in III-V Heterojunction Tunnel FET (HTFET) design: (1) Tunnel Heterojunction is characterized in three-dimensional atomic scale resolution using Atom Probe Tomography. We explore the impact of tunnel junction abruptness and source dopant fluctuations on HTFET performance; (2) Extremely scaled Hi-K gate dielectric (sub-0.8 nm EOT: HfO₂, HfO₂-ZrO₂ bilayer, and ZrO₂)/III-V channel interface is evaluated using Positive Bias Temperature Instability (PBTI) measurements. HfO₂ based HTFET exhibits superior PBTI performance over ZrO₂ based HTFET and shows lifetime improvement over III-V FinFET.

Original language	English (US)
Title of host publication	2015 IEEE International Electron Devices Meeting, IEDM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	14.2.1-14.2.4
ISBN (Electronic)	9781467398930
DOIs	https://doi.org/10.1109/IEDM.2015.7409694
State	Published - Feb 16 2015
Event	61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States Duration: Dec 7 2015 → Dec 9 2015

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2016-February
ISSN (Print)	0163-1918

Other

Other	61st IEEE International Electron Devices Meeting, IEDM 2015
Country/Territory	United States
City	Washington
Period	12/7/15 → 12/9/15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2015.7409694

Cite this

Pandey, R., Agrawal, N., Chobpattana, V., Henry, K., Kuhn, M., Liu, H., Labella, M., Eichfeld, C., Wang, K., Maier, J., Stemmer, S., Mahapatra, S., & Datta, S. (2015). Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (pp. 14.2.1-14.2.4). Article 7409694 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409694

Pandey, R. ; Agrawal, N. ; Chobpattana, V. et al. / Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs. 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 14.2.1-14.2.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{d1357b6ad0c24a0b9e8905a1b79ee5d5,

title = "Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs",

abstract = "We present reliability analysis of the two most critical interfaces in III-V Heterojunction Tunnel FET (HTFET) design: (1) Tunnel Heterojunction is characterized in three-dimensional atomic scale resolution using Atom Probe Tomography. We explore the impact of tunnel junction abruptness and source dopant fluctuations on HTFET performance; (2) Extremely scaled Hi-K gate dielectric (sub-0.8 nm EOT: HfO2, HfO2-ZrO2 bilayer, and ZrO2)/III-V channel interface is evaluated using Positive Bias Temperature Instability (PBTI) measurements. HfO2 based HTFET exhibits superior PBTI performance over ZrO2 based HTFET and shows lifetime improvement over III-V FinFET.",

author = "R. Pandey and N. Agrawal and V. Chobpattana and K. Henry and M. Kuhn and H. Liu and M. Labella and C. Eichfeld and K. Wang and J. Maier and S. Stemmer and S. Mahapatra and S. Datta",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 61st IEEE International Electron Devices Meeting, IEDM 2015 ; Conference date: 07-12-2015 Through 09-12-2015",

year = "2015",

month = feb,

day = "16",

doi = "10.1109/IEDM.2015.7409694",

language = "English (US)",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "14.2.1--14.2.4",

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address = "United States",

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Pandey, R, Agrawal, N, Chobpattana, V, Henry, K, Kuhn, M, Liu, H, Labella, M, Eichfeld, C , Wang, K, Maier, J, Stemmer, S, Mahapatra, S & Datta, S 2015, Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs. in 2015 IEEE International Electron Devices Meeting, IEDM 2015., 7409694, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2016-February, Institute of Electrical and Electronics Engineers Inc., pp. 14.2.1-14.2.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 12/7/15. https://doi.org/10.1109/IEDM.2015.7409694

Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs. / Pandey, R.; Agrawal, N.; Chobpattana, V. et al.
2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 14.2.1-14.2.4 7409694 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs

AU - Pandey, R.

AU - Agrawal, N.

AU - Chobpattana, V.

AU - Henry, K.

AU - Kuhn, M.

AU - Liu, H.

AU - Labella, M.

AU - Eichfeld, C.

AU - Wang, K.

AU - Maier, J.

AU - Stemmer, S.

AU - Mahapatra, S.

AU - Datta, S.

PY - 2015/2/16

Y1 - 2015/2/16

N2 - We present reliability analysis of the two most critical interfaces in III-V Heterojunction Tunnel FET (HTFET) design: (1) Tunnel Heterojunction is characterized in three-dimensional atomic scale resolution using Atom Probe Tomography. We explore the impact of tunnel junction abruptness and source dopant fluctuations on HTFET performance; (2) Extremely scaled Hi-K gate dielectric (sub-0.8 nm EOT: HfO2, HfO2-ZrO2 bilayer, and ZrO2)/III-V channel interface is evaluated using Positive Bias Temperature Instability (PBTI) measurements. HfO2 based HTFET exhibits superior PBTI performance over ZrO2 based HTFET and shows lifetime improvement over III-V FinFET.

AB - We present reliability analysis of the two most critical interfaces in III-V Heterojunction Tunnel FET (HTFET) design: (1) Tunnel Heterojunction is characterized in three-dimensional atomic scale resolution using Atom Probe Tomography. We explore the impact of tunnel junction abruptness and source dopant fluctuations on HTFET performance; (2) Extremely scaled Hi-K gate dielectric (sub-0.8 nm EOT: HfO2, HfO2-ZrO2 bilayer, and ZrO2)/III-V channel interface is evaluated using Positive Bias Temperature Instability (PBTI) measurements. HfO2 based HTFET exhibits superior PBTI performance over ZrO2 based HTFET and shows lifetime improvement over III-V FinFET.

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DO - 10.1109/IEDM.2015.7409694

M3 - Conference contribution

AN - SCOPUS:84964008016

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 14.2.1-14.2.4

BT - 2015 IEEE International Electron Devices Meeting, IEDM 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 61st IEEE International Electron Devices Meeting, IEDM 2015

Y2 - 7 December 2015 through 9 December 2015

ER -

Pandey R, Agrawal N, Chobpattana V, Henry K, Kuhn M, Liu H et al. Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs. In 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 14.2.1-14.2.4. 7409694. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2015.7409694

Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs

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