@inproceedings{d1357b6ad0c24a0b9e8905a1b79ee5d5,
title = "Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs",
abstract = "We present reliability analysis of the two most critical interfaces in III-V Heterojunction Tunnel FET (HTFET) design: (1) Tunnel Heterojunction is characterized in three-dimensional atomic scale resolution using Atom Probe Tomography. We explore the impact of tunnel junction abruptness and source dopant fluctuations on HTFET performance; (2) Extremely scaled Hi-K gate dielectric (sub-0.8 nm EOT: HfO2, HfO2-ZrO2 bilayer, and ZrO2)/III-V channel interface is evaluated using Positive Bias Temperature Instability (PBTI) measurements. HfO2 based HTFET exhibits superior PBTI performance over ZrO2 based HTFET and shows lifetime improvement over III-V FinFET.",
author = "R. Pandey and N. Agrawal and V. Chobpattana and K. Henry and M. Kuhn and H. Liu and M. Labella and C. Eichfeld and K. Wang and J. Maier and S. Stemmer and S. Mahapatra and S. Datta",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 61st IEEE International Electron Devices Meeting, IEDM 2015 ; Conference date: 07-12-2015 Through 09-12-2015",
year = "2015",
month = feb,
day = "16",
doi = "10.1109/IEDM.2015.7409694",
language = "English (US)",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "14.2.1--14.2.4",
booktitle = "2015 IEEE International Electron Devices Meeting, IEDM 2015",
address = "United States",
}