Tunneling through Thin Oxides—New Insights from Microscopic Calculations

M. Städele; Blair Richard Tuttle; B. Fischer; K. Hess

doi:10.1023/A:1020700819083

Tunneling through Thin Oxides—New Insights from Microscopic Calculations

M. Städele, Blair Richard Tuttle, B. Fischer, K. Hess

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this paper, we summarize our recent efforts to analyze transmission probabilities of extremely thin SiO₂ gate oxides using microscopic models of Si[100]-SiO₂-Si[100] heterojunctions. We predict energy-dependent tunneling masses and their influence on transmission coefficients, discuss tunneling probabilities and analyze effects arising from the violation of parallel momentum conservation. As an application of the present method, gate currents in short bulk MOSFETs are calculated, including elastic defect-assisted contributions.

Original language	English (US)
Pages (from-to)	153-159
Number of pages	7
Journal	Journal of Computational Electronics
Volume	1
Issue number	1-2
DOIs	https://doi.org/10.1023/A:1020700819083
State	Published - Jul 1 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Modeling and Simulation
Electrical and Electronic Engineering

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10.1023/A:1020700819083

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abstract = "In this paper, we summarize our recent efforts to analyze transmission probabilities of extremely thin SiO2 gate oxides using microscopic models of Si[100]-SiO2-Si[100] heterojunctions. We predict energy-dependent tunneling masses and their influence on transmission coefficients, discuss tunneling probabilities and analyze effects arising from the violation of parallel momentum conservation. As an application of the present method, gate currents in short bulk MOSFETs are calculated, including elastic defect-assisted contributions.",

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AU - Tuttle, Blair Richard

AU - Fischer, B.

AU - Hess, K.

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N2 - In this paper, we summarize our recent efforts to analyze transmission probabilities of extremely thin SiO2 gate oxides using microscopic models of Si[100]-SiO2-Si[100] heterojunctions. We predict energy-dependent tunneling masses and their influence on transmission coefficients, discuss tunneling probabilities and analyze effects arising from the violation of parallel momentum conservation. As an application of the present method, gate currents in short bulk MOSFETs are calculated, including elastic defect-assisted contributions.

AB - In this paper, we summarize our recent efforts to analyze transmission probabilities of extremely thin SiO2 gate oxides using microscopic models of Si[100]-SiO2-Si[100] heterojunctions. We predict energy-dependent tunneling masses and their influence on transmission coefficients, discuss tunneling probabilities and analyze effects arising from the violation of parallel momentum conservation. As an application of the present method, gate currents in short bulk MOSFETs are calculated, including elastic defect-assisted contributions.

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ER -

Tunneling through Thin Oxides—New Insights from Microscopic Calculations

Abstract

All Science Journal Classification (ASJC) codes

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